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IXTH26P20P

型号：

IXTH26P20P

描述：

P沟道增强型额定雪崩[ P-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

190 K

下载PDF手册
Preliminary Technical Information  
PolarPTM  
Power MOSFET  
P-Channel Enhancement Mode  
Avalanche Rated  
IXTA26P20P  
IXTH26P20P  
IXTP26P20P  
IXTQ26P20P  
TO-247 (IXTH)  
VDSS = - 200V  
ID25 = - 26A  
RDS(on)  
≤
170mΩ  
TO-220 (IXTP)  
TO-263 (IXTA)  
G
S
G
D(TAB)  
D(TAB)  
G
D
S
D(TAB)  
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-3P (IXTQ)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D(TAB)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 26  
- 70  
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
IAR  
TC = 25°C  
- 26  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
10  
V/ns  
W
Features:  
300  
z International standard packages  
z Fast intrinsic diode  
z Dynamic dV/dt Rated  
z Avalanche Rated  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z Rugged PolarPTM process  
z Low QG and Rds(on) characterization  
z Low Drain-to-Tab capacitance  
z Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque  
(TO-3P,TO-220,TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-3P  
TO-220  
TO-263  
6.0  
5.5  
3.0  
2.5  
g
g
g
g
Applications:  
z
Hight side switching  
Push-pull amplifiers  
DC Choppers  
Current regulators  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, unless otherwise specified)  
z
Automatic test equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = -250 μA  
VDS = VGS, ID = -250μA  
VGS = ±20V, VDS = 0V  
- 200  
- 2.5  
V
Advantages:  
- 4.5  
V
±100 nA  
z
Low gate charge results in simple  
drive requirement  
Improved Gate, Avalanche and  
dynamic dV/dt ruggedness  
High power density  
IDSS  
VDS = VDSS  
VGS = 0V  
- 10 μA  
- 250 μA  
z
TJ = 150°C  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
170 mΩ  
z
Fast switching  
DS99913(10/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA26P20P IXTP26P20P  
IXTP26P20P IXTQ26P20P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, (Note 1)  
10  
17  
S
Ciss  
Coss  
Crss  
2920  
540  
pF  
pF  
pF  
VGS = 0V, VDS = -25V, f = 1MHz  
100  
td(on)  
tr  
td(off)  
tf  
18  
33  
46  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
56  
18  
20  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.5 °C/W  
°C/W  
(TO-3P)(TO-247)  
(TO-220)  
0.21  
0.25  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
- 26  
A
A
V
ISM  
VSD  
Repetitive  
- 104  
- 3.0  
IF = -13A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
240  
2.20  
-18.0  
ns  
μC  
A
IF = -13A, -di/dt = -100A/μs  
VR = -100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA26P20P IXTP26P20P  
IXTP26P20P IXTQ26P20P  
TO-263 (IXTA) Outline  
TO-247 (IXTH) Outline  
∅ P  
1
2
3
e
Terminals: 1 - Gate  
2 - Drain  
Inches  
Dim.  
Millimeter  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
TO-3P (IXTQ) Outline  
TO-220 (IXTP) Outline  
Pins: 1 - Gate  
2 - Drain  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA26P20P IXTP26P20P  
IXTP26P20P IXTQ26P20P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
-28  
-24  
-20  
-16  
-12  
-8  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
-9V  
VGS = -10V  
-8V  
-7V  
-8V  
-6V  
-7V  
-6V  
-5V  
-5V  
-4  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
-4.5  
0
-3  
-6  
-9  
-12  
-15  
-18  
-21  
-24  
-27  
-30  
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -13A vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
-28  
-24  
-20  
-16  
-12  
-8  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
-8V  
VGS = -10V  
-7V  
-6V  
I D = -26A  
I D = -13A  
-5V  
-4  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -13A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-28  
-26  
-24  
-22  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 175ºC  
-15V  
- - - -  
-6  
TJ = 25ºC  
-4  
-2  
0
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
TJ - Degrees Centigrade  
IXTA26P20P IXTP26P20P  
IXTP26P20P IXTQ26P20P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
32  
28  
24  
20  
16  
12  
8
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
4
0
0
-3  
-3.5  
-4  
-4.5  
-5  
-5.5  
-6  
-6.5  
-7  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VDS = -100V  
I
I
D = - 13A  
G = -1mA  
TJ = 150ºC  
TJ = 25ºC  
0
5
10 15 20 25 30 35 40 45 50 55 60  
QG - NanoCoulombs  
-0.5  
-1  
-1.5  
-2  
-2.5  
-3  
-3.5  
-4  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
-
100  
10,000  
RDS(on) Limit  
f = 1 MHz  
25µs  
100µs  
1ms  
C
C
iss  
1,000  
100  
10  
-10  
oss  
10ms  
100ms  
DC  
C
TJ = 175ºC  
C = 25ºC  
Single Pulse  
rss  
T
-
1
-
-
-
1000  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
10  
100  
VDS - Volts  
VDS - Volts  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA26P20P IXTP26P20P  
IXTP26P20P IXTQ26P20P  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_26P20P(B5)10-10-07  
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