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IXTL2N450

型号:

IXTL2N450

描述:

初步技术信息[ Preliminary Technical Information ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

137 K

Preliminary Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4500V  
= 2A  
IXTL2N450  
RDS(on) 23Ω  
(Electrically Isolated Tab)  
ISOPLUS i5-PakTM  
N-Channel Enhancement Mode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
4500  
4500  
V
V
Isolated Tab  
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
D = Drain  
S = Source  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
2
8
A
A
PD  
TC = 25°C  
220  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
z
Isolated Mounting Surface  
4000V~ RMS Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
8
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
VGS(th)  
IGSS  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
3.5  
5.5  
V
Applications  
±200 nA  
z
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
z
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
VDS = 3.6kV  
25 μA  
50 μA  
μA  
z
z
Laser and X-Ray Generation Systems  
Note 2, TJ = 125°C  
250  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
23  
Ω
DS100458A(04/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTL2N450  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i5-PakTM (IXTL) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 60V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
1.3  
2.2  
S
Ciss  
Coss  
Crss  
6900  
264  
88  
pF  
pF  
pF  
RGi  
Integrated Gate Input Resistance  
3.0  
Ω
td(on)  
tr  
td(off)  
tf  
44  
38  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 1kV, ID = 1A  
100  
205  
RG = 0Ω (External)  
1 = Gate  
2 = Source  
3 = Drain  
4 = Isolated  
Qg(on)  
Qgs  
156  
38  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
67  
SYM  
INCHES  
MILLIMETER  
MIN  
MAX  
MIN  
MAX  
RthJC  
RthCS  
0.56 °C/W  
°C/W  
A
0.190  
0.205  
0.118  
0.055  
0.055  
0.072  
0.068  
0.029  
1.040  
0.799  
4.83  
2.59  
5.21  
3.00  
1.40  
1.40  
1.83  
1.73  
0.74  
26.42  
20.29  
0.15  
A1  
A2  
b
0.102  
0.046  
1.17  
0.045  
1.14  
b1  
b2  
c
0.063  
1.60  
Source-Drain Diode  
0.058  
1.47  
0.020  
0.51  
Symbol  
Test Conditions  
Characteristic Values  
D
1.020  
25.91  
19.56  
3.81 BSC  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
0.770  
IS  
VGS = 0V  
2
8
3
A
A
e
0.150 BSC  
e1  
L
0.450 BSC  
0.780  
11.43 BSC  
19.81  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
0.820  
0.102  
0.235  
0.513  
0.180  
0.130  
0.690  
0.821  
20.83  
2.59  
L1  
Q
0.080  
0.210  
0.490  
0.150  
0.100  
0.668  
0.801  
2.03  
5.33  
V
5.97  
Q1  
R
12.45  
3.81  
13.03  
4.57  
IF = 2A, -di/dt = 100A/μs, VR = 100V  
1.75  
μs  
R1  
S
2.54  
3.30  
16.97  
20.34  
17.53  
20.85  
T
U
0.065  
0.080  
1.65  
2.03  
Notes: 1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp Idss measurement.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTL2N450  
Fig. 3. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
1.8  
1.6  
1.4  
1.2  
1
VGS = 10V  
2.4  
2
VGS = 10V  
8V  
7V  
7V  
1.6  
1.2  
0.8  
0.4  
0
0.8  
0.6  
0.4  
0.2  
0
6V  
5V  
6V  
0
10  
20  
30  
40  
VDS - Volts  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 1A Value  
vs. Drain Current  
Fig. 3. RDS(on) Normalized to ID = 1A Value  
vs. Junction Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
I D = 2A  
TJ = 125ºC  
I D = 1A  
TJ = 25ºC  
0
0.5  
1
1.5  
2
2.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - MilliAmperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current  
vs. Case Temperature  
Fig. 6. Input Admittance  
1.4  
1.2  
1
2
1.6  
1.2  
0.8  
0.4  
0
0.8  
0.6  
0.4  
0.2  
0
TJ = 125ºC  
25ºC  
- 40ºC  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Volts  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTL2N450  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
3
2.5  
2
6
5
4
3
2
1
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
1.5  
1
TJ = 25ºC  
125ºC  
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
VDS = 1000V  
C
iss  
I
D = 1A  
I G = 10mA  
C
oss  
C
rss  
f = 1 MHz  
5
10  
0
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Resistive Switching Times vs.  
External Gate Resistance  
Fig. 12. Forward-Bias Safe Operating Area  
10  
250  
200  
150  
100  
50  
RDS( ) Limit  
on  
t f  
25µs  
100µs  
t r  
1
1ms  
t d(off)  
10ms  
t d(on)  
0.1  
0.01  
TJ = 150ºC  
100ms  
1s  
TC = 25ºC  
DC  
Single Pulse  
0
0
1
2
3
4
5
6
7
8
9
10  
100  
1,000  
10,000  
RG(ext) - Ohms  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTL2N450  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: TL2N450(H9) 4-12-12  
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