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IXTF1N400

型号：

IXTF1N400

描述：

高压功率MOSFET （电气绝缘标签） N沟道增强模式[ High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

152 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4000V  
= 1A  
IXTF1N400  
RDS(on) ≤ 60Ω  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
ISOPLUS i4-PakTM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
4000  
4000  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
1
2
Isolated Tab  
5
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1
3
A
A
1 = Gate  
5 = Drain  
2 = Source  
PD  
TC = 25°C  
160  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V~ Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
z
z
z
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
5
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
z
z
VGS(th)  
IGSS  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
2.0  
4.0  
V
±100 nA  
Applications  
IDSS  
VDS = 3.2kV, VGS = 0V  
VDS = 4.0kV  
VDS = 3.2kV  
50 μA  
250 μA  
μA  
z
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
Note 2, TJ = 100°C  
250  
z
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
60  
Ω
z
Laser and X-Ray Generation Systems  
DS100159D(01/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTF1N400  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i4-PakTM (HV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.55  
0.95  
S
Ciss  
Coss  
Crss  
2530  
93  
pF  
pF  
pF  
30  
td(on)  
tr  
td(off)  
tf  
28  
24  
81  
90  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A  
RG = 2Ω (External)  
Qg(on)  
Qgs  
78  
10  
35  
nC  
nC  
nC  
Pin 1 = Gate  
Pin 2 = Soure  
Pin 3 = Drain  
Pin 4 = Isolated  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.78 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
1
5
4
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 100A/μs, VR = 200V  
V
3.5  
μs  
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Part must be heatsunk for high-temp Idss measurement.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTF1N400  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
1.4  
1.2  
1
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VGS = 10V  
VGS = 10V  
5V  
5V  
0.8  
0.6  
0.4  
0.2  
0
4.5V  
4.5V  
4V  
3V  
4V  
3V  
0
50  
100  
150  
200  
250  
300  
350  
400  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
5V  
VGS = 10V  
I D = 1.0A  
I D = 0.5A  
4V  
3V  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 0.5A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current  
vs. Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.2  
1
VGS = 10V  
TJ = 125ºC  
0.8  
0.6  
0.4  
0.2  
0
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
TC - Degrees Centigrade  
ID - MilliAmperes  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTF1N400  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
2
1.8  
1.6  
1.4  
1.2  
1
1.4  
1.2  
1
TJ = - 40ºC  
25ºC  
125ºC  
0.8  
0.6  
0.4  
0.2  
0
TJ = 125ºC  
25ºC  
- 40ºC  
0.8  
0.6  
0.4  
0.2  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
3.5  
40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
2.4  
2
10  
9
8
7
6
5
4
3
2
1
0
VDS = 1000V  
I D = 0.5A  
I G = 10mA  
1.6  
1.2  
0.8  
0.4  
0
TJ = 25ºC  
TJ = 125ºC  
0
0.5  
1
1.5  
2
2.5  
3
0
10  
20  
30  
40  
50  
60  
70  
80  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1
10,000  
1,000  
100  
f = 1 MHz  
C
iss  
0.1  
C
C
oss  
rss  
0.01  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_1N400(8P)8-25-09-A  
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