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IXTQ200N075T

型号：

IXTQ200N075T

描述：

初步的技术资料沟槽栅功率MOSFET[ Preliminary Technical Information Trench Gate Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

190 K

下载PDF手册
Preliminary Technical Information  
IXTH200N075T  
IXTQ200N075T  
VDSS = 75  
ID25 = 200  
RDS(on) ≤ 5.0 mΩ  
V
A
Trench Gate  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
75  
75  
V
V
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
200  
75  
540  
A
A
A
Lead Current Limit, RMS  
G
(TAB)  
D
TC = 25°C, pulse width limited by TJM  
S
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
750  
A
mJ  
TO-3P (IXTQ)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
TC = 25°C  
430  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
G
D
(TAB)  
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Features  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
z
Easy to mount  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
75  
V
V
z
Space savings  
z
2.0  
4.0  
High power density  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
TJ = 150°C  
250  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
4.0  
5.0 mΩ  
DS99634 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH200N075T  
IXTQ200N075T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
70  
110  
S
Ciss  
Coss  
Crss  
6800  
1040  
190  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
31  
57  
54  
52  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
160  
35  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
43  
RthJC  
RthCH  
0.35°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-3P  
TO-247  
0.25  
0.21  
°C/W  
°C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
IS  
VGS = 0 V  
200  
A
A
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
540  
1.0  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/μs  
50  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTH200N075T  
IXTQ200N075T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
60  
40  
20  
5V  
0
0
0
1
2
3
4
5
6
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
200  
180  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 200A  
D
6V  
5V  
I
= 100A  
D
60  
40  
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 100A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.6  
2.4  
2.2  
2
140  
120  
100  
80  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
V
= 10V  
GS  
1.8  
1.6  
1.4  
1.2  
1
15V - - - -  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
T = 25ºC  
J
20  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
250  
300  
350  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTH200N075T  
IXTQ200N075T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
60  
40  
60  
20  
30  
0
0
0
50  
100  
150  
200  
250  
300  
350  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
V
= 38V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
C
oss  
f = 1 MHz  
rss  
0
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH200N075T  
IXTQ200N075T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
R
V
V
= 5  
Ω
G
= 10V  
GS  
T
= 25ºC  
= 38V  
J
DS  
R
V
V
= 5  
Ω
G
= 10V  
= 38V  
GS  
DS  
I
= 50A  
D
T
J
= 125ºC  
I
= 25A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
130  
120  
110  
100  
90  
60  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
27  
58  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
t r  
td(on)  
- - - -  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
TJ = 125ºC, V  
= 10V  
GS  
I
= 25A  
D
V
= 38V  
DS  
80  
I
= 50A  
D
70  
I
= 50A  
D
60  
50  
t f  
R
td(off)  
- - - -  
I
= 25A  
D
40  
= 5 , V  
= 10V  
GS  
Ω
G
30  
V
= 38V  
DS  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
170  
150  
130  
110  
90  
300  
260  
220  
180  
140  
100  
60  
t f  
td(off)  
- - - -  
T
= 125ºC, VGS = 10V  
J
VDS = 38V  
TJ = 125ºC  
t f  
td(off) - - - -  
I
= 25A  
D
R
= 5 , VGS = 10V  
Ω
G
VDS = 38V  
I
= 50A  
D
T
J
= 25ºC  
70  
50  
25  
30  
35  
40  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXYS REF: T_200N075T (5V) 6-20-06.xls  
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