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IXST45N120B

型号:

IXST45N120B

描述:

高电压IGBT S系列 - 改进SCSOA能力[ High Voltage IGBT S Series - Improved SCSOA Capability ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

58 K

IXSH 45N120B  
IXST 45N120B  
"S" Series - Improved SCSOA Capability  
HighVoltageIGBT  
IC25  
= 75 A  
= 1200 V  
VCES  
VCE(sat) = 3.0 V  
Preliminary data  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXSH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
(TAB)  
(TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C (limited by leads)  
TC = 90°C  
75  
45  
A
A
A
TO-268 ( IXST)  
TC = 25°C, 1 ms  
180  
G
E
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 5 W  
Clampedinductiveload  
ICM = 90  
@ 0.8 VCES  
A
ms  
W
tSC  
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W  
TC = 25°C  
10  
G = Gate  
C = Collector  
TAB = Collector  
S = Emitter  
PC  
300  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mountingtorque  
(TO-247)  
TO-247  
1.13/10 Nm/lb.in.  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• EpitaxialSilicondriftregion  
- fastswitching  
- small tail current  
Weight  
6
g
• MOS gate turn-on for drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 1.0 mA, VGE = 0 V  
1200  
3
V
V
• Welding  
IC = 250 mA, VCE = VGE  
6
ICES  
VCE = 0.8 • VCES  
Note 1  
50 mA  
2.5 mA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
IC = IC90, VGE = 15 V  
Note 2  
2.5  
2.6  
3.0  
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98713A(7/00)  
1 - 2  
IXSH 45N120B  
IXST 45N120B  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXSH) Outline  
IC = IC90; VCE = 10 V,  
Note 2  
16  
23  
S
Cies  
Coes  
Cres  
3300  
240  
65  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
120  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
45  
td(on)  
tri  
td(off)  
tfi  
36  
27  
ns  
ns  
Inductive load, TJ = 25°C  
Dim. Millimeter  
Inches  
Min. Max. Min. Max.  
IC = IC90, VGE = 15 V  
RG = 5 W  
VCE = 0.8 VCES  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
360  
380  
500 ns  
750 ns  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Note 3  
Eoff  
13  
22 mJ  
E
F
4.32 5.49 0.170 0.216  
td(on)  
tri  
38  
29  
ns  
ns  
5.4  
6.2 0.212 0.244  
Inductive load, TJ = 125°C  
G
H
1.65 2.13 0.065 0.084  
IC = IC90, VGE = 15 V  
RG = 5 W, VCE = 0.8 VCES  
Note 3  
-
4.5  
-
0.177  
Eon  
2.9  
mJ  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
td(off)  
tfi  
440  
700  
ns  
ns  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
Eoff  
22  
mJ  
N
1.5 2.49 0.087 0.102  
RthJC  
RthCK  
0.42 K/W  
K/W  
TO-268AA (D3 PAK)  
(TO-247)  
0.25  
Notes: 1. Device must be heatsunk for high temperature leakage current  
measurementstoavoidthermalrunaway.  
2. Pulse test, t £ 300 ms, duty cycle £ 2 %  
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG.  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Min. Recommended Footprint  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
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