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2SK3389

型号：

2SK3389

描述：

开关稳压器， DC- DC转换器应用电机驱动应用[ Switching Regulator, DC-DC Converter Applications Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

322 K

下载PDF手册
2SK3389  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)  
2SK3389  
Switching Regulator, DC-DC Converter Applications  
Motor Drive Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 3.8 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 70 S (typ.)  
fs  
Low leakage current: I  
= 100 µA (V = 30 V)  
DSS  
DS  
Enhancement-mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings (Tc = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 kΩ)  
V
GS  
DGR  
Gate-source voltage  
V
±30  
GSS  
DC  
I
75  
D
(Note 1)  
Drain current  
A
Pulse  
(Note 1)  
I
300  
125  
731  
DP  
JEDEC  
JEITA  
―
Drain power dissipation  
Single pulse avalanche energy  
P
W
D
AS  
AR  
SC-97  
2-9F1B  
E
mJ  
(Note 2)  
TOSHIBA  
Avalanche current  
I
75  
12.5  
A
Weight: 0.74 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Notice:  
Please use the S1 pin for gate input  
signal return. Make sure that the  
main current flows into S2 pin.  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.00  
Unit  
4
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Please use devices on condition that the channel temperature  
is below 150°C.  
1
2
Note 2: V  
DD  
= 25 V, T = 25°C (initial), L = 95 µH, I  
ch  
= 75 A, R = 25 Ω  
AR G  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
1
2002-03-04  
2SK3389  
Electrical Characteristics (Note 4) (Tc = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
I
V
V
I
V
V
V
±10  
100  
µA  
µA  
V
V
mΩ  
S
GSS  
GS  
DS  
DS  
Drain cut-off current  
= 30 V, V  
= 10 mA, V  
D
= 0 V  
= 0 V  
DSS  
GS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
30  
2.0  
(BR) DSS  
V
= 10 V, I = 1 mA  
4.0  
5.0  
th  
DS  
GS  
DS  
D
R
= 10 V, I = 38 A  
3.8  
70  
3530  
570  
1870  
DS (ON)  
D
|Y |  
= 10 V, I = 38 A  
35  
fs  
D
C
C
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
I
= 38 A  
D
10 V  
0 V  
Rise time  
t
10  
25  
20  
65  
62  
r
V
GS  
V
OUT  
Turn-on time  
Switching time  
t
on  
Fall time  
t
f
V
15 V  
−
DD  
Turn-off time  
t
off  
<
Duty 1%, t = 10 µs  
=
w
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
24 V, V  
= 10 V, I = 75 A  
nC  
−
DD  
GS  
D
Gate-source charge  
Gate-drain (“miller”) charge  
Q
Q
43  
19  
gs  
gd  
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.  
(However, while switching times are measured, please don’t connect and ground it.)  
Source-Drain Ratings and Characteristics (Note 5) (Tc = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
75  
Unit  
A
Continuous drain reverse current  
I
1
DR  
(Note 1, Note 5)  
Pulse drain reverse current  
(Note 1, Note 5)  
Continuous drain reverse current  
(Note 1, Note 5)  
Pulse drain reverse current  
(Note 1, Note 5)  
I
I
1
300  
1
A
DRP  
I
2
A
DR  
2
4
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
1 = 75 A, V = 0 V  
GS  
−1.5  
V
ns  
nC  
DS2F  
DR  
DR  
t
= 75 A, V  
= 0 V,  
GS  
120  
180  
rr  
dI /dt = 50 A/µs  
Q
rr  
DR  
Note 5: drain, flowing current value between the S2 pin, open the S1 pin  
drain, flowing current value between the S1 pin, open the S2 pin  
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.  
Marking  
※ Lot Number  
Type  
K3389  
Month (starting from alphabet A)  
Year (last number of the christian era)  
※
2
2002-03-04  
2SK3389  
I
– V  
I – V  
D DS  
D
DS  
100  
80  
200  
160  
Common source  
Tc = 25°C  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
5.75  
10  
8
6.5  
6
8
6
5.5  
5.25  
10  
60  
40  
20  
120  
80  
5.5  
5
4.75  
5
40  
V
GS  
= 4.5 V  
V
GS  
= 4.5 V  
0
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
V
– V  
GS  
I
– V  
GS  
DS  
D
200  
0.5  
0.4  
0.3  
0.2  
Common source  
Tc = 25°C  
Common source  
= 10 V  
V
DS  
Pulse test  
160  
120  
80  
Pulse test  
I
= 75 A  
D
35  
15  
0.1  
0
40  
0
Tc = 100°C  
−55  
25  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
(V)  
GS  
GS  
Y
– I  
R
– I  
fs  
D
DS (ON)  
1000  
100  
10  
100  
10  
1
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
−55  
25  
Tc = 100°C  
V
GS  
= 10 V  
15 V  
1
0.1  
100  
100  
(A)  
1
10  
Drain current  
1000  
1
10  
Drain current  
1000  
I
D
(A)  
I
D
3
2002-03-04  
2SK3389  
R
– Tc  
I
– V  
DR DS  
DS (ON)  
10  
8
1000  
100  
10  
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
GS  
Pulse test  
35  
10  
6
I
= 70  
D
15  
5
4
3
1
2
V
GS  
= 0  
0
1
−80  
−40  
0
40  
80  
120  
160  
0
0.2  
0.4  
0.6  
0.8  
1.0  
(V)  
1.2  
Case temperature Tc (°C)  
Drain-source voltage  
V
DS  
Capacitance – V  
V
– Tc  
th  
DS  
100000  
10000  
1000  
5
4
Common source  
V
I
= 10 V  
DS  
= 1 mA  
D
Pulse test  
C
iss  
3
2
1
C
oss  
C
rss  
Common source  
100  
10  
V
= 0 V  
GS  
f = 1 MHz  
Tc = 25°C  
0
0.1  
1
10  
100  
−80  
−40  
0
40  
80  
120  
160  
Drain-source voltage  
V
(V)  
Case temperature Tc (°C)  
DS  
P
– Tc  
Dynamic input/output characteristics  
D
200  
160  
40  
16  
Common source  
I
= 75 A  
D
Tc = 25°C  
Pulse test  
30  
20  
12  
8
6
V
DS  
V
DD  
= 24 V  
120  
80  
12  
V
GS  
4
10  
0
40  
10  
0
20  
Total gate charge  
0
40  
80  
120  
160  
0
40  
60  
(nC)  
80  
200  
Case temperature Tc (°C)  
Q
g
4
2002-03-04  
2SK3389  
r
th  
– t  
w
10  
1
Duty = 0.5  
0.2  
P
DM  
0.1  
0.05  
0.02  
0.1  
0.01  
t
T
Duty = t/T  
th (ch-c)  
0.01  
R
= 1.0°C/W  
Single  
0.00001  
0.0001  
0.001  
0.01  
Pulse width  
0.1  
1
10  
t
(s)  
w
E
– T  
ch  
Safe operating area  
AS  
1000  
100  
1000  
I
max (pulsed) *  
100 µs *  
1 ms *  
D
800  
600  
400  
200  
0
I
max  
D
(continuous)  
DC operation  
Tc = 25°C  
10  
1
*: Single nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature  
V
DSS  
max  
(V)  
0.1  
25  
50  
75  
100  
125  
(°C)  
150  
0.1  
1
10  
100  
Drain-source voltage  
V
Channel temperature (initial) T  
ch  
DS  
B
VDSS  
15 V  
0 V  
I
AR  
V
V
DS  
DD  
Test circuit  
Waveform  
1
2
B
R
V
= 25 Ω  
DD  
VDSS  
G
=
L I  
Ε
AS  
2
−
= 25 V, L = 95 µH  
B
V
DD  
VDSS  
5
2002-03-04  
2SK3389  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
• The information contained herein is subject to change without notice.  
6
2002-03-04  
厂商 型号 描述 页数 下载

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ETC

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ETC

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ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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PANASONIC

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