IXSR 40N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 (IXSR) OUTLINE
IC= IT; VCE = 10 V,
16
23
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Ciss
Coss
Crss
3700
440
60
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Qg
190
45
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
88
4 no connection
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
50
50
ns
ns
IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 2.7 W
Dim.
Millimeter
Inches
Min. Max. Min. Max.
110
120
1.8
200 ns
200 ns
2.6 mJ
A
A1
A2
4.83 5.21
2.29 2.54
1.91 2.16
.190 .205
.090 .100
.075 .085
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Eoff
b
b1
b2
1.14 1.40
1.91 2.13
2.92 3.12
.045 .055
.075 .084
.115 .123
td(on)
tri
50
50
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100 mH
C
D
E
0.61 0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
Eon
td(off)
tfi
2.2
190
180
e
L
L1
5.45 BSC
19.81 20.32
3.81 4.32
.215 BSC
.780 .800
.150 .170
VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
Q
R
5.59 6.20
4.32 4.83
.220 .244
.170 .190
Eoff
2.6
mJ
S
T
U
13.21 13.72
15.75 16.26
1.65 3.03
.520 .540
.620 .640
.065 .080
RthJC
RthCK
0.73 K/W
K/W
0.15
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IT, VGE = 0 V,
1.8
2.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
2
A
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
ns
RthJC
1.15 K/W
Note: 1. IT = 40A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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