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2SK3439

型号：

2SK3439

描述：

DC-DC转换器继电器驱动器和电机驱动应用[ DC-DC Converter Relay Drive and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

321 K

下载PDF手册
2SK3439  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)  
2SK3439  
DC-DC Converter  
Relay Drive and Motor Drive Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 3.8 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 70 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 30 V)  
DSS  
DS  
Enhancement-mode: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Drain-gate voltage (R  
Gate-source voltage  
V
30  
30  
±20  
75  
V
V
V
DSS  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
<
Drain current  
A
Pulse (t 1 ms)  
=
I
300  
125  
731  
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
W
D
AS  
AR  
JEDEC  
JEITA  
―
E
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
Repetitive avalanche energy (Note 3)  
Channel temperature  
I
E
T
T
75  
12.5  
150  
A
TOSHIBA  
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
ch  
Storage temperature range  
−55 to 150  
stg  
Notice:  
Thermal Characteristics  
Please use the S1 pin for gate  
input signal return. Make  
sure that the main current  
flows into S2 pin.  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Please use devices on conditions that the channel temperature  
is below 150°C.  
4
Note 2: V  
= 24 V, T = 25°C (initial), L = 100 µH, R = 25 Ω,  
DD  
ch  
G
I
= 75 A  
AR  
Note 3: Repetitive rating; pulse width limited by maximum channel  
1
temperature.  
This transistor is an electrostatic sensitive device. Please handle with  
caution.  
2
3
Marking  
※ Lot Number  
Type  
K3439  
Month (starting from alphabet A)  
Year (last number of the christian era)  
※
1
2001-12-11  
2SK3439  
Electrical Characteristics (Note 4) (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±16 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
I
V
V
±10  
µA  
µA  
V
GSS  
GS  
DS  
DS  
Drain cut-off current  
= 30 V, V  
= 0 V  
= 0 V  
100  
DSS  
GS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
V
I
= 10 mA, V  
D
30  
(BR) DSS  
V
V
V
V
V
= 10 V, I = 1 mA  
1.3  
2.5  
5.0  
10  
V
th  
DS  
GS  
GS  
DS  
D
= 10 V, I = 38 A  
3.8  
5.0  
D
Drain-source ON resistance  
R
mΩ  
DS (ON)  
= 4 V, I = 38 A  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 38 A  
35  
70  
S
D
C
C
5450  
620  
1850  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
Rise time  
t
15  
30  
65  
r
I
= 38 A  
D
10 V  
0 V  
V
GS  
V
OUT  
Turn-on time  
t
on  
Switching time  
Fall time  
t
f
V
≈ 15 V  
DD  
Turn-off time  
t
110  
116  
off  
<
Duty 1%, t = 10 µs  
=
w
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
≈ 34 V, V  
= 10 V, I = 75 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
Q
84  
32  
gs  
Gate-drain (“miller”) charge  
gd  
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.  
(However, while switching times are measured, please don’t connect and ground it.)  
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
75  
Unit  
A
Continuous drain reverse current  
I
1
DR  
(Note 1, Note 5)  
Pulse drain reverse current  
(Note 1, Note 5)  
I
1
300  
1
A
DRP  
Continuous drain reverse current  
(Note 1, Note 5)  
I
2
A
DR  
Pulse drain reverse current  
(Note 1, Note 5)  
I
2
4
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
1 = 75 A, V = 0 V  
GS  
−1.5  
V
DS2F  
DR  
DR  
t
= 75 A, V  
= 0 V,  
GS  
120  
180  
ns  
nC  
rr  
dI /dt = 50 A/µs  
Q
rr  
DR  
Note 5: drain, flowing current value between the S2 pin, open the S1 pin  
drain, flowing current value between the S1 pin, open the S2 pin  
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.  
2
2001-12-11  
2SK3439  
I
– V  
I – V  
D DS  
D
DS  
4
100  
80  
100  
80  
Common source  
Tc = 25°C  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
6
10  
4
3.5  
3.3  
3.4  
6
8
10  
3.2  
60  
40  
20  
60  
40  
20  
3.0  
3.0  
V
GS  
= 2.8 V  
V
GS  
= 2.8 V  
0
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
1
2
3
4
5
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
V
– V  
I
– V  
GS  
DS  
GS  
D
160  
120  
80  
0.8  
0.6  
0.4  
0.2  
0
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
I
= 75 A  
D
40  
38  
19  
Tc = −55°C  
100  
2
25  
0
0
4
6
0
5
10  
15  
(V)  
20  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
GS  
GS  
Y
– I  
R
– I  
fs  
D
DS (ON)  
500  
300  
30  
10  
Common source  
Tc = 25°C  
Pulse test  
Tc = −55°C  
100  
100  
V
GS  
= 4 V  
25  
5
3
50  
30  
10  
10  
Common source  
= 10 V  
Pulse test  
1
V
DS  
5
3
0.5  
1
3
5
10  
30 50  
(A)  
100  
300  
3
5
30  
50  
1
10  
100  
Drain current  
I
D
Drain current  
I
D
(A)  
3
2001-12-11  
2SK3439  
R
– Tc  
I
– V  
DS  
DS (ON)  
DR  
3
6
5
4
3
300  
100  
Common source  
= 10 V  
I
= 75 A  
D
V
DS  
Pulse test  
10  
50  
30  
5
19, 38  
10  
5
3
1
V
= 0 V  
GS  
2
1
0
1
0.5  
0.3  
Common source  
Tc = 25°C  
Pulse test  
0.1  
−80  
−40  
0
40  
80  
120  
160  
0
−0.2  
−0.4  
−0.6  
−0.8  
−1.0  
(V)  
−1.2  
Case temperature Tc (°C)  
Drain-source voltage  
V
DS  
Capacitance – V  
V
– Tc  
th  
DS  
10000  
4
3
2
1
C
Common source  
iss  
V
I
= 10 V  
DS  
= 1 mA  
3000  
1000  
D
Pulse test  
C
oss  
C
rss  
Common source  
300  
100  
V
= 0 V  
GS  
f = 1 MHz  
Tc = 25°C  
0.1  
0.3  
1
3
10  
(V)  
30  
0
Drain-source voltage  
V
−80  
−40  
0
40  
80  
120  
160  
DS  
Case temperature Tc (°C)  
P
– Tc  
Dynamic input/output characteristics  
D
200  
160  
50  
20  
Common source  
= 75 A  
I
D
Tc = 25°C  
Pulse test  
V
GS  
40  
30  
20  
10  
0
16  
12  
8
120  
80  
6
V
V
DD  
= 24 V  
DS  
12  
40  
4
10  
0
40  
Total gate charge  
0
40  
80  
120  
160  
0
80  
120  
200  
200  
160  
Case temperature Tc (°C)  
Q
g
(nC)  
4
2001-12-11  
2SK3439  
r
th  
– t  
w
3
1
Duty = 0.5  
0.2  
0.3  
0.1  
0.03  
0.01  
P
DM  
0.1  
0.05  
0.02  
t
T
Duty = t/T  
th (ch-c)  
0.01  
R
= 1.0°C/W  
Single  
0.00001  
0.0001  
0.001  
0.01  
Pulse width  
0.1  
1
10  
t
(s)  
w
E
– T  
ch  
Safe operating area  
AS  
300  
100  
1000  
I
max (pulsed) *  
D
100 µs *  
I
max (continuous)  
D
800  
600  
400  
200  
0
1 ms *  
30  
10  
DC operation  
Tc = 25°C  
3
1
*: Single nonrepetitive pulse  
Tc = 25°C  
25  
50  
75  
100  
125  
(°C)  
150  
0.3  
0.1  
Curves must be derated  
linearly with increase in  
temperature  
Channel temperature (initial)  
T
ch  
V
max  
DSS  
0.1  
1
10  
100  
Drain-source voltage  
V
(V)  
DS  
B
VDSS  
15 V  
0 V  
I
AR  
V
V
DS  
DD  
Test circuit  
Waveform  
1
2
B
R
V
= 25 Ω  
DD  
VDSS  
G
=
L I  
Ε
AS  
2
−
= 24 V, L = 100 µH  
B
V
DD  
VDSS  
5
2001-12-11  
2SK3439  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
• The information contained herein is subject to change without notice.  
6
2001-12-11  
厂商 型号 描述 页数 下载

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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PANASONIC

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PANASONIC

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PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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