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IXER35N120D1_06

型号：

IXER35N120D1_06

描述：

NPT3 IGBT与二极管ISOPLUS247[ NPT3 IGBT with Diode in ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

152 K

下载PDF手册
IXER 35N120D1  
NPT3 IGBT  
IC25  
VCES  
= 50A  
=1200V  
with Diode  
in ISOPLUS247TM  
VCE(sat)typ. = 2.2V  
ISOPLUS 247TM  
E153432  
C
E
G
G
C
E
Isolated Backside  
C = Collector E = Emitter  
G = Gate  
Ftures  
IGBT  
• NPTIGBT  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
- fast switching  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
20  
V
VGES  
- short tail current for optimized  
performance in resonant circuits  
• HiPerFREDTM diode  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
50  
32  
A
A
ICM  
VCEK  
VGE = 15 V; RG = 39 Ω; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
50  
VCES  
A
µs  
W
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
tSC  
(SCSOA)  
VCE = 900V; VGE = 15 V; RG = 39 Ω; TVJ = 125°C  
non-repetitive  
10  
• ISOPLUS 247TM package  
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
Ptot  
TC = 25°C  
200  
- high reliability  
- industry standard outline  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
• single switches  
• choppers with complementary free  
wheeling diodes  
• phaselegs, H bridges, three phase  
bridges e.g. for  
- power supplies, UPS  
- AC, DC and SR drives  
- induction heating  
VCE(sat)  
IC = 35 A; VGE = 1V; TVJ = 25°C  
TVJ = 125°C  
2.2  
2.6  
2.8  
V
V
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.4 mA  
mA  
0.4  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
85  
50  
440  
50  
5.4  
2.6  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 35 A  
VGE = 15 V; RG = 39 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 35 A  
2
150  
nF  
nC  
RthJC  
RthCH  
0.6 K/W  
K/W  
with heatsink compound  
0.3  
© 2006 IXYS All rights reserved  
1 - 4  
IXER 35N120D1  
Diode  
Equivalent Circuits for Simulation  
Conduction  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
48  
25  
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
V0 = 0.95 V; R0 = 45 mΩ  
IF = 35 A; TVJ = 25°C  
TVJ = 125°C  
2.5  
1.9  
2.9  
V
V
Diode (typ. at TJ = 125°C)  
V0 = 1.26V; R0 = 15 mΩ  
IRM  
trr  
51  
80  
A
ns  
Thermal Response  
IF = 30 A; di /dt = -1100 A/µs; TVJ = 125°C  
VR = 600 V;FVGE = 0 V  
Erec(off)  
1.8  
mJ  
RthJC  
RthCH  
1.2 K/W  
K/W  
with heatsink compound  
0.6  
IGB
Cth1 = 0.067 J/K; Rth1 = 0.108 K/W  
Cth2 = 0.175 J/K; Rth2 = 0.491 K/W  
Component  
Symbol  
Diode  
Cth1 = 0.039 J/K; Rth1 = 0.311 K/W  
Cth2 = 0.090 J/K; Rth2 = 0.889 K/W  
Conditions  
Maximum Rngs  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
ISOPLUS247TM OUTLINE  
VISOL  
FC  
IISOL ≤ 1 mA; 50/60 Hz  
2500  
V~  
N
mounting force with clip  
0...120  
Symbol  
Cp  
Conditions  
Characteristic Values  
min.  
typ. max.  
coupling capacity between shorted  
pins and mounting tab in he case  
30  
pF  
g
Weight  
6
The convex bow of substrate is typ. < 0.04 mm over plastic surface level  
of device bottom side  
This drawing will meet all dimensions requirement of JEDEC outline  
TO-247 AD except screw hole and except Lmax.  
© 2006 IXYS All rights reserved  
2 - 4  
IXER 35N120D1  
120  
A
100  
120  
A
100  
VGE = 17 V  
VGE = 17 V  
15 V  
15 V  
13 V  
IC  
IC  
13 V  
11 V  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
11 V  
9 V  
9 V  
TVJ = 125°C  
TVJ = 25°C  
V
V
6 7  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
90  
A
120  
A
VCE = 20 V  
75  
IF  
100  
IC  
60  
80  
60  
40  
20  
0
45  
TVJ = 125°C  
TVJ = 25°C  
30  
15  
0
TVJ = 125°C  
TVJ = 25°C  
10  
V
0
1
2
3
4
4
6
8
12  
VG
14 V 16  
VF  
Fig. 3 Typ. transfer characristi
Fig. 4 Typ. forward characteristics of  
freewheelingdiode  
20  
10  
K/W  
1
V
diode  
15  
ZthJC  
IGBT  
VGE  
0.1  
10  
5
0.01  
0.001  
single pulse  
0.1  
VCE = 600 V  
IC = 35 A  
MUBW3512E7  
0
0.0001  
0
40  
80  
120  
160nC 200  
QG  
0.001  
0.01  
1
10  
s
t
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. transient thermal impedance  
© 2006 IXYS All rights reserved  
3 - 4  
IXER 35N120D1  
20  
100  
ns  
6
mJ  
4
1200  
ns  
VCE = 600 V  
VGE 15 V  
t
d(on)  
mJ  
16  
Eoff  
=
1000  
80  
70  
60  
50  
40  
30  
20  
10  
0
RG = 39 Ω  
TVJ = 125°C  
Eoff  
Eon  
t
t
800  
600  
400  
200  
0
12  
8
t
r
VCE = 600 V  
VGE 15 V  
=
td(off)  
E
on  
2
0
RG = 39 Ω  
TVJ = 125°C  
4
Erec(off)  
tf  
0
A
A
0
20  
40  
60  
80  
0
20  
40  
60  
80  
IC  
IC  
Fig. 7  
Typ. turn on energy and switching  
times versus collector current  
Fig. 8  
Typ. turn off energy and switching  
times versus collector current  
8
mJ  
6
160  
4
800  
ns  
VCE = 600 V  
VCE = 600 V  
VGE 15 V  
mJ  
VG
15 V  
ns  
=
E
on  
IC = 5 A  
TVJ = 125°C  
IC = 35 A  
TVJ = 125°C  
Eoff  
Eon  
120  
3
2
1
0
600  
400  
200  
0
t
t
t
Eff  
d(on)  
4
2
0
80  
40  
0
td(off)  
t
r
EREC(off)  
tf  
Ω
80  
10  
20  
30  
40  
50  
60  
RG  
70 Ω 80  
10  
20  
30  
40  
50  
60  
70  
RG  
Fig. 9 Typ. turn on energy and switching  
times versus gate retor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
12  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
TVJ = 125°C  
15Ω  
I=30 A  
RG  
39  
=
15  
Ω
TVJ = 125°C  
VR = 600 V  
IRM  
24  
Ω
70A  
24Ω  
10  
8
F
39Ω  
VR = 600 V  
Ω
56  
Ω
56Ω  
50A  
75  
Ω
RG=  
75Ω  
75Ω  
35A  
6
tRR  
56Ω  
Ω
39  
24Ω  
15Ω  
IF=  
15A  
4
7,5A  
2
0
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
-diF/dt [A/µs]  
-diF/dt [A/µs]  
Fig. 11 Typ. turn off characteristics  
of free wheeling diode  
Fig. 12 Typ. turn off characteristics  
of free wheeling diode  
© 2006 IXYS All rights reserved  
4 - 4  
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