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IXER20N120D1

型号：

IXER20N120D1

描述：

NPT3 IGBT在ISOPLUS247[ NPT3 IGBT in ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

231 K

下载PDF手册
IXER 20N120  
IXER 20N120D1  
NPT3 IGBT  
IC25  
VCES  
VCE(sat)typ= 2.4V  
= 36A  
=1200V  
in ISOPLUS247™  
C
C
ISOPLUS247™  
G
G
G
C
E

Isolated Backside  
E
E
G = Gate  
C = Collector E = Emitter  
IXER 20Nꢀ20  
IXER 20Nꢀ20Dꢀ  
Features  
• T3 IGBT  
- losaturation voltage  
- positive temperature coefficient for  
easy paralleling  
IGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to ꢀ50°C  
ꢀ200  
20  
V
V
VGES  
- fast switching  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
29  
ꢀ
A
A
- short tail current for optimized  
performance in resonant circuits  
• HiPerFRED™ diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
• ISOPLUS247™ package  
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
ICM  
VCEK  
VGE = ꢀ5 V; RG = 68 W; TVJ = ꢀ25°C  
RBSOA Clamped inductive load; L = ꢀ00 µH  
0  
VCES  
A
µs  
W
tSC  
VCE = 900 V; VGE = ꢀ5 V; RG = 68 W  
ꢀ0  
(SCSOA) TVJ = ꢀ25°C; non-repetitive  
Ptot  
TC = 25°C  
ꢀ30  
Symbol  
Conditions  
Characteristic Values  
(T= 25°C, unless otherwise specified)  
min. typ. max.  
- high reliability  
- industry standard outline  
Applications  
VCE(sat)  
IC = 20 A; VGE = ꢀ5 V; TVJ 25°C  
= 5°C  
2.4  
2.8  
2.8  
V
V
• single switches  
• choppers with complementary free  
wheeling diodes  
• phaselegs, H bridges, three phase  
bridges e.g. for  
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
0.2  
V
VCE = VCES; VGE 0 VTVJ = 25°C  
mA  
mA  
TVJ = ꢀ25°C  
0.2  
IGES  
VCE = 0 V; VGE  
Inductive load  
L = ꢀ00 µH; TVJ = ꢀ25°C  
VCE = 600 V; IC = 25 A  
VGE = ꢀ5 V; RG = 68 W  
=
20 V  
200  
nA  
- power supplies, UPS  
- AC, DC and SR drives  
- induction heating  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
205  
ꢀ05  
320  
ꢀ75  
4.ꢀ  
ns  
ns  
ns  
ns  
mJ  
mJ  
ꢀ.5  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = ꢀ MHz  
VCE = 600 V; VGE = ꢀ5 V; IC = 20 A  
ꢀ.2  
ꢀ00  
nF  
nC  
RthJC  
RthCH  
0.96 K/W  
K/W  
with heatsink compound  
0.5  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080ꢀꢀ8a  
ꢀ - 4  
IXER 20N120  
IXER 20N120D1  
Diode [Dꢀ version only]  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
25  
ꢀ5  
A
A
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
IF = 20 A; VGE = 0 V;  
TVJ = 25°C  
VJ = ꢀ25°C  
2.6  
2.0  
3.0  
V
V
T
ꢀ6  
ꢀ30  
A
ns  
IRM  
trr  
VR = 600 V; L = ꢀ00 µH; TVJ = ꢀ25°C  
diF /dt = -400A/µs; IF = ꢀ5 A; VGE = 0 V  
2.3  
ꢀ.3  
K/W  
RthJC  
RthCH  
with heatsink compound  
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+ꢀ50  
-55...+ꢀ50  
°C  
°C  
V~  
VISOL  
FC  
IISOL < ꢀ mA; 50/60 Hz  
mounting force with clip  
2500  
20...ꢀ20  
Symbol  
Conditions  
Characterisic Vues  
min. typ. ma
coupling capacity between shorted  
pins and mounting tab in the case  
30  
pF  
CP  
Weight  
6
g
ISOPLUS247™ Outline  
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-f-  
oberfläche der Bauteilunterseite  
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of  
device bottom side  
Die Gehäuseabmessungen entsprechen demTyp TO-247 AD gemäß JEDEC  
außer Schraubloch und Lmax  
This drawing will meet all dimensions requiarement of JEDEC outlineTO-247 AD  
except screw hole and except Lmax  
.
.
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080ꢀꢀ8a  
2 - 4  
IXER 20N120  
IXER 20N120D1  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
VGE = 17 V  
15 V  
VGE = 17 V  
15 V  
TVJ = 125°C  
13 V  
TVJ = 25°C  
13 V  
11 V  
9 V  
11 V  
9 V  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE [V]  
VCE [V]  
Fig. ꢀ  
Typ. output characteristics  
Fig. 2  
Typ. output characteristics  
50  
40  
3
20  
10  
0
80  
60  
40  
20  
0
VCE = 20 V  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
0
1
2
3
4
0
5
10  
15  
20  
VF [V]  
VGE [V]  
Fig. 3  
Typ. transfer characterics  
Fig. 4  
Typ. forward characteristics  
of free wheeling diode  
40  
30  
20  
10  
0
200  
150  
100  
50  
15  
12  
9
VCE = 600 V  
IC = 20 A  
trr  
6
TVJ = 125°C  
VR = 600 V  
IF = 15 A  
3
IRM  
FII30-12E  
0
1000  
0
0
200  
400  
600  
800  
0
20  
40  
60  
80  
100  
QG [nC]  
-di/dt [A/µs]  
Fig. 5  
Typ. turn on gate charge  
Fig. 6  
Typ. turn off characteristics  
of free wheeling diode  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080ꢀꢀ8a  
3 - 4  
IXER 20N120  
IXER 20N120D1  
20  
16  
12  
8
250  
200  
150  
100  
50  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
400  
td(off)  
td(on)  
350  
tr  
300  
250  
200  
150  
100  
VCE = 600 V  
VGE 15 V  
VCE = 600 V  
VGE 15 V  
=
=
RG = 68 :  
TVJ = 125°C  
RG = 68 :  
TVJ = 125°C  
4
Eoff  
50  
tf  
Eon  
0
40  
0
40  
0
A
0
10  
20  
30  
0
10  
20  
30  
IC [A]  
IC [A]  
Fig. 7  
Typ. turn on energy and switching  
Fig. 8  
Typ. turn off energy and switching  
times versus collector current  
times versus collector current  
10  
8
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1250  
1000  
750  
500  
250  
0
VCE = 600 V  
VGE  
= 15 V  
IC = 20 A  
TVJ = 125°C  
td(off)  
6
Eoff  
VCE = 600 V  
4
VGE  
= 15 V  
IC = 20 A  
TVJ = 125°C  
2
tf  
0
0
50  
100  
150  
200  
250  
0
50  
100  
150  
200  
250  
RG [:]  
RG [:]  
Fig. 9  
Typ. turn on energy vs gate resistor  
Fig.ꢀ0 Typ. turn off energy and switching  
times versus gate resistor  
50  
40  
30  
20  
10  
0
10  
diode  
IGBT  
RG = 68 :  
1
TVJ = 125°C  
IGBT  
Diode  
Ri  
τi  
Ri  
τi  
ꢀ 0.ꢀ93 0.00ꢀ60ꢀ 0.497 0.00ꢀ782  
2 0.57ꢀ 0.022  
3 0.059 2.ꢀ92  
4 0.634 0.ꢀ34  
ꢀ.4ꢀ9 0.043  
0.72 0.ꢀ96  
0.945 0.0ꢀꢀ  
0.1  
0.001  
0.01  
0.1  
1
10  
0
200 400 600 800 1000 1200 1400  
VCE [V]  
t [ms]  
Fig. ꢀꢀ Reverse biased safe operating area  
RBSOA  
Fig. ꢀ2 Typ. transient thermal impedance  
Thermal Analysis Model  
n
R1  
R2  
R3  
R4  
t
  
  
Zth(t) =  
R
1
−
exp  
−
i
∑
τ
C1  
C2  
C3  
C4  
i
i
=
1
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080ꢀꢀ8a  
4 - 4  
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