IXSK 40N60CD1
IXSX 40N60CD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-264 AA Outline
IC = IC90; VCE = 10 V,
16
23
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Ciss
Coss
Crss
3700
440
60
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Qg
190
45
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
88
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Inductive load, TJ = 25°C
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.021
1.020
.780
.202
.114
.083
.056
.106
.122
.033
1.030
.786
td(on)
tri
td(off)
tfi
50
50
ns
ns
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 2.7 W
70
70
1.0
140 ns
120 ns
1.7 mJ
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
c
0.53
0.83
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
Eoff
.215 BSC
J
0.00
0.00
20.32 20.83
2.29
3.17
0.25
0.25
.000
.000
.800
.090
.010
.010
.820
.102
td(on)
tri
50
50
ns
ns
mJ
ns
K
L
L1
P
Inductive load, TJ = 125°C
2.59
3.66
IC = IC90, VGE = 15 V, L = 100 mH
.125
.144
Eon
td(off)
tfi
2.2
140
140
VCE = 0.8 VCES, RG = 2.7 W
Q
Q1
R
R1
S
T
6.07
8.38
3.81
1.78
6.04
1.57
6.27
8.69
4.32
2.29
6.30
1.83
.239
.330
.150
.070
.238
.062
.247
.342
.170
.090
.248
.072
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
Eoff
1.7
mJ
RthJC
RthCK
0.48 K/W
K/W
PLUS247TM (IXSX)
0.15
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
1.8
2.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
2
A
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
ns
Dim.
Millimeter
Min. Max. Min. Max.
Inches
RthJC
0.75 K/W
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
