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2SK2139

型号:

2SK2139

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

113 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2139  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
(in millimeters)  
The 2SK2139 is N-Channel Power MOS Field Effect Transistor  
designed for high voltage switching applications.  
10.0 0.ꢀ  
4.5 0.ꢁ  
ꢀ.ꢁ 0.ꢁ  
ꢁ.7 0.ꢁ  
FEATURES  
Low On-Resistance  
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A)  
Low Ciss  
Ciss = 930 pF TYP.  
High Avalanche Capability Ratings  
Isolate TO-220 (MP-45F) Package  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
600  
±30  
±5.0  
±20  
35  
V
V
Drain Current (DC)  
A
0.7 0.1  
ꢁ.54  
1.ꢀ 0.ꢁ  
ꢁ.5 0.1  
0.65 0.1  
1.5 0.ꢁ  
ꢁ.54  
Drain Current (pulse)*  
A
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
1. Gate  
ꢁ. Drain  
ꢀ. Source  
PT2  
2.0  
Tch  
150  
Storage Temperature  
Tstg –55 to +150 ˚C  
1
ꢁ ꢀ  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
5.0  
8.3  
A
MP-45F (ISOLATED TO-220)  
EAS  
mJ  
*
PW 10 µs, Duty Cycle 1 %  
Drain  
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0  
Body  
Diode  
Gate  
Source  
Document No. TC-2512  
(O. D. No. TC-8071)  
Date Published January 1995 P  
Printed in Japan  
1995  
©
2SK2139  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source On-state Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
SYMBOL  
RDS(on)  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
1.1  
MAX.  
1.5  
UNIT  
TEST CONDITIONS  
VGS = 10 V, ID = 2.5 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 2.5 A  
VDS = 600 V, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V  
2.5  
1.5  
3.5  
V
S
µA  
100  
nA  
Gate to Source Leakage Current  
Input Capacitance  
IGSS  
±100  
Ciss  
930  
200  
40  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td(on)  
tr  
20  
VGS = 10 V  
Rise Time  
10  
VDD = 150 V  
ID = 2.5 A, RG = 10 Ω  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
60  
12  
RL = 60 Ω  
Total Gate Charge  
QG  
30  
6.0  
15  
VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
ID = 5.0 V  
VDD = 450 V  
IF = 5.0 A, VGS = 0  
IF = 5.0 A  
1.0  
320  
1.4  
ns  
µC  
Qrr  
di/dt = 50 A/µs  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
L
V
GS  
RL  
RG = 25 Ω  
90 %  
V
GS  
Wave Form  
V
GS (on)  
10 %  
10 %  
RG  
0
PG  
PG.  
50 Ω  
VDD  
RG = 10 Ω  
VDD  
VGS = 20 - 0 V  
90 %  
I
D
90 %  
10 %  
ID  
VGS  
0
BVDSS  
I
D
0
Wave Form  
IAS  
VDS  
t
d (on)  
t
r
t
d (off)  
t
f
t
ID  
VDD  
ton  
t
off  
t = 1us  
Duty Cycle 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
IG = 2 mA  
RL  
PG.  
50 Ω  
VDD  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2139  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
80  
60  
40  
20  
60  
40  
20  
0
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
TC - Case Temperature - ˚C  
TC - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
Pulsed  
VGS = 20 V  
10  
5
10 V  
8 V  
ID (pulse)  
µ
µ
6 V  
ID (DC)  
1.0  
0.1  
TC = 25 ˚C  
Single Pulse  
1
10  
100  
1 000  
0
5
10  
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
50  
10  
Tch = 125 ˚C  
75 ˚C  
25 ˚C  
–25 ˚C  
1.0  
VDS = 10 V  
Pulsed  
0
5
10  
VGS - Gate to Source Voltage - V  
3
2SK2139  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Rth (ch-a) = 62.5 (˚C/W)  
1 000  
100  
10  
Rth (ch-c) = 3.57 (˚C/W)  
1
0.1  
0.01  
0.001  
TC = 25 ˚C  
Single Pulse  
10µ  
100µ  
1 m  
10 m 100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
10  
Pulsed  
Tch = –25 ˚C  
25 ˚C  
2.0  
75 ˚C  
125 ˚C  
ID = 5 A  
2.5 A  
1.0  
1.0  
VDS = 10 V  
Pulsed  
0
0.1  
4.0  
1.0  
100  
4
8
12  
16  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage (V)  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE  
vs. CHANNEL TEMPERATURE  
4.0  
3.0  
2.0  
1.0  
0
Pulsed  
2.0  
1.0  
VGS = 10 V  
20 V  
VDS = 10 V  
ID = 1mA  
10  
100  
–50  
0
50  
100  
150  
ID - Drain Current - A  
Tch - Channel Temperature - ˚C  
4
2SK2139  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
100  
10  
Pulsed  
VGS = 10 V  
Pulsed  
2.0  
ID = 2.5 A  
10 V  
1.0  
VGS = 0 V  
1.0  
0.1  
0
–50  
0
50  
100  
150  
0
0.5  
1.0  
1.5  
2.0  
Tch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
1 000  
100  
VGS = 0 V  
f = 1 MHz  
tr  
Ciss  
tf  
td (on)  
td (off)  
100  
10  
1
Coss  
Crss  
10  
VDD = 150 V  
VGS = 10 V  
RG = 10  
1.0  
1.0  
10  
100  
0.1  
1.0  
10  
100  
1 000  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
DYNAMIC INPUT CHARACTERISTICS  
800  
600  
400  
200  
16  
800  
µ
di/dt = 50 A/ s  
ID = ID (DC)  
VGS = 0  
14  
12  
10  
8
VDS = 450 V  
300 V  
600  
400  
150 V  
VGS  
6
4
200  
0
VDS  
2
0
0
10  
20  
30  
40  
0.1  
1.0  
10  
100  
Qg - Gate Charge - nC  
ID - Drain Current - A  
5
2SK2139  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY vs.  
STARTING CHANNEL TEMPERATURE  
12  
10  
8
10  
1.0  
0.1  
ID (peak)= ID (DC)  
VDD = 150 V  
IAS = 5A  
6
4
RG = 25 Ω  
VDD = 150 V  
VGS = 20 V0  
Starting Tch  
2
0
100 µ  
1 m  
10 m  
100 m  
25  
50  
75  
100  
125  
150  
L - Inductance - H  
Starting Tch - Starting Channel Temperature - ˚C  
6
2SK2139  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
TEI-1202  
IEI-1209  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2139  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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