PolarHTTM
Power MOSFET
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
VDSS = 55 V
ID25 = 110 A
RDS(on) = 13.5 mΩ
N-Channel Enhancement Mode
TO-3P(IXTQ)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
55
55
V
V
G
D
(TAB)
S
VGS
Continuous
Tranisent
20
30
V
V
TO-220 (IXTP)
VGSM
ID25
IDRMS
IDM
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
110
75
250
A
A
A
(TAB)
G
D
IAR
TC = 25°C
110
A
S
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
TO-263 (IXTA)
1.0
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
G
S
TC = 25°C
330
W
(TAB)
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
G = Gate
D = Drain
S = Source
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
300
260
°C
°C
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Md
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
5.5
4
g
g
g
3
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Advantages
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250μA
VGS = 20 VDC, VDS = 0
55
V
V
z
Easy to mount
Space savings
High power density
2.5
5.0
z
z
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
μA
μA
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
11
13.5 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99182A(05/05)
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