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VUO25-16NO8

型号:

VUO25-16NO8

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

76 K

VUO 25  
IdAVM = 25 A  
VRRM = 1200-1800 V  
Three Phase  
Rectifier Bridge  
~
+
-
VRSM  
V
VRRM  
V
Type  
~
~
~
~
600  
1200  
1400  
1600  
1800  
600  
1200  
1400  
1600  
1800  
VUO 25-06NO8  
VUO 25-12NO8  
VUO 25-14NO8  
VUO 25-16NO8  
VUO 25-18NO8  
~
+
Features  
Symbol  
Test Conditions  
Maximum Ratings  
Package with ¼" fast-on terminals  
Isolation voltage 3000 V~  
Planar passivated chips  
Blocking voltage up to 1800 V  
Low forward voltage drop  
UL registered E 72873  
IdAV  
IdAVM  
T = 85°C, module  
TCC = 63°C, module  
20  
25  
A
A
IFSM  
T
= 45°C;  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
380  
400  
A
A
VVRJ = 0  
T
= T  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
360  
400  
A
A
VVRJ = 0 VJM  
I2t  
T
= 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
725  
750  
A2s  
A2s  
VVRJ = 0  
Applications  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
T
= T  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
650  
650  
A2s  
A2s  
VVRJ = 0 VJM  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Advantages  
Easy to mount with one screw  
Space and weight savings  
Improved temperature and power  
Md  
Mounting torque  
(M5)  
(10-32 UNF)  
2 ± 10 %  
18 ± 10 %  
Nm  
lb.in.  
Weight  
typ.  
22  
g
cycling  
Symbol  
IR  
Test Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
TVJ = 25°C;  
VR = VRRM  
VR = VRRM  
£
£
0.3  
5.0  
mA  
mA  
TVJ = TVJM  
;
VF  
IF = 150 A;  
TVJ = 25°C  
£
2.2  
V
VT0  
rT  
For power-loss calculations only  
0.85  
12  
V
mW  
RthJC  
per diode; DC current  
per module  
9.3  
1.55  
K/W  
K/W  
RthJH  
per diode; DC current  
per module  
10.2  
1.7  
K/W  
K/W  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
12.7 mm  
9.4 mm  
50 m/s2  
Data according to DIN IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
VUO 25  
I2t  
Fig. 1 Forward current versus  
voltage drop per diode  
Fig. 2 Surge overload current per diode  
IFSM: Crest value. t: duration  
Fig. 3 I2t versus time (1-10 ms)  
per diode  
Fig. 4 Power dissipation versus direct output current and ambient temperature  
Fig. 5 Maximum forward current at  
case temperature  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.194  
0.556  
2.25  
6.3  
0.024  
0.07  
5.8  
8.5  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
5
0.194  
0.556  
2.25  
6.3  
0.024  
0.07  
5.8  
8.5  
28.0  
0.9  
Fig. 6 Transient thermal impedance per diode  
© 2000 IXYS All rights reserved  
2 - 2  
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