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TYN1008

型号：

TYN1008

描述：

敏感和标准8的可控硅[ Sensitive and standard 8 A SCRs ]

品牌：

STMICROELECTRONICS[ ST ]

页数：

12 页

PDF大小：

150 K

下载PDF手册
TN805, TN815, TS820  
TYN608, TYN808, TYN1008  
Sensitive and standard 8 A SCRs  
Features  
A
■ On-state rms current, I  
8 A  
T(RMS)  
A
■ Repetitive peak off-state voltage, V  
/V  
G
DRM RRM  
A
600 to 1000 V  
K
■ Triggering gate current, I 0.2 to 15 mA  
GT  
K
K
A
G
A
G
DPAK  
IPAK  
Description  
TN805-xxxB  
TN815-xxxB  
TS820-xxxB  
TN805-xxxH  
TN815-xxxH  
TS820-xxxH  
Available either in sensitive (TS8) or standard  
(TN8 / TYN) gate triggering levels, the 8 A SCR  
series is suitable to fit all modes of control found  
in applications such as overvoltage crowbar  
protection, motor control circuits in power tools  
and kitchen aids, inrush current limiting circuits,  
capacitive discharge ignition and voltage  
regulation circuits.  
A
A
K
K
A
A
G
G
TO-220AB  
(TYNx08RG)  
TO-220AB  
(TS820-xxxT)  
Available in through-hole or surface-mount  
packages, they provide an optimized performance  
in a limited space.  
Table 1.  
Device summary  
Voltage (xxx) VDRM/VRRM  
Sensitivity  
IGT  
Order code  
Package  
600 V  
700 V  
800 V  
1000 V  
TN805-xxxB  
X
X
X
X
X
X
X
X
X
X
X
X
5 mA  
5 mA  
DPAK  
IPAK  
TN805-xxxH  
TN815-xxxB  
TN815-xxxH  
TS820-xxxB  
TS820-xxxH  
TS820-xxxT  
TYNx08RG  
15 mA  
15 mA  
0.2 mA  
0.2 mA  
0.2 mA  
15 mA  
DPAK  
IPAK  
X
X
X
DPAK  
IPAK  
TO-220AB  
TO-220AB  
X
X
January 2010  
Doc ID 7476 Rev 6  
1/12  
www.st.com  
12  
Characteristics  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
1
Characteristics  
Table 2.  
Absolute ratings (limiting values)  
Value  
TN805  
Unit  
Symbol  
Parameter  
TN815  
TYNx08  
TS820  
IT(RMS) On-state rms current (180° conduction angle)  
Tc = 110 °C  
Tc = 110 °C  
8
5
A
A
IT(AV)  
Average on-state current (180° conduction angle)  
tp = 8.3 ms  
73  
70  
100  
95  
Non repetitive surge peak on-state  
current  
ITSM  
Tj = 25 °C  
A
tp = 10 ms  
I2t  
I2t value for fusing  
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25 °C  
24.5  
45  
A2S  
Critical rate of rise of on-state  
current IG = 2 x IGT , tr ≤ 100 ns  
dI/dt  
IGM  
Tj = 125 °C  
50  
A/µs  
Peak gate current  
Tj = 125 °C  
Tj = 125 °C  
4
1
A
PG(AV) Average gate power dissipation  
W
Tstg  
Tj  
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
V
VRGM  
Maximum peak reverse gate voltage (for TN8xx and TYNx08 only)  
5
Table 3.  
Symbol  
Sensitive electrical characteristics (T = 25 °C, unless otherwise specified)  
j
Test conditions  
TS820  
Unit  
IGT  
VGT  
VGD  
VRG  
IH  
MAX.  
MAX.  
MIN.  
200  
0.8  
0.1  
8
µA  
V
VD = 12 V, RL = 140 Ω  
VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω  
IRG = 10 µA  
Tj = 125 °C  
V
MIN.  
V
IT = 50 mA, RGK = 1 kΩ  
IG = 1 mA ,, RGK = 1 kΩ  
VD = 65% VDRM, RGK = 220 Ω  
ITM = 16 A, tp = 380 µs  
Threshold voltage  
MAX.  
MAX.  
MIN.  
5
mA  
mA  
V/µs  
V
IL  
6
dV/dt  
VTM  
Vt0  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
5
MAX.  
MAX.  
MAX.  
1.6  
0.85  
46  
5
V
Rd  
Dynamic resistance  
mΩ  
µA  
mA  
IDRM  
IRRM  
VDRM = VRRM, RGK = 220 Ω  
MAX.  
1
2/12  
Doc ID 7476 Rev 6  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Characteristics  
Table 4.  
Symbol  
Standard electrical characteristics (T = 25 °C, unless otherwise specified)  
j
Test conditions  
TN805  
TN815 TYNx08  
Unit  
MIN.  
MAX.  
MAX.  
MIN.  
0.5  
5
2
15  
1.3  
0.2  
40  
50  
150  
1.6  
0.85  
46  
5
2
IGT  
mA  
VD = 12 V, RL = 33 Ω  
15  
VGT  
VGD  
IH  
V
V
VD = VDRM, RL = 3.3 kΩ  
IT = 100 mA , gate open  
IG = 1.2 IGT  
Tj = 125 °C  
MAX.  
MAX.  
MIN.  
25  
30  
50  
30  
70  
mA  
mA  
V/µs  
V
IL  
dV/dt  
VTM  
Vt0  
VD = 67% VDRM, gate open  
ITM = 16 A tp = 380 µs  
Threshold voltage  
Tj =125 °C  
Tj = 25 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
150  
MAX.  
MAX.  
MAX.  
V
Rd  
Dynamic resistance  
mΩ  
µA  
mA  
IDRM  
IRRM  
VDRM = VRRM  
MAX.  
2
Table 5.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
Rth(j-c)  
Junction to case (DC)  
1.3  
70  
°C/W  
S(1) = 0.5 cm2 DPAK  
IPAK  
Rth(j-a)  
Junction to ambient (DC)  
100  
60  
°C/W  
TO-220AB  
1. S = Copper surface under tab  
Figure 1.  
Maximum average power  
dissipation versus average on-state  
current  
Figure 2.  
Average and DC on-state current  
versus case temperature  
P(W)  
I
(A)  
T(AV)  
8
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
D.C.  
α = 180°  
7
6
5
4
3
2
1
0
α = 180°  
360°  
α
T
(°C)  
case  
I (A)  
T(AV)  
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
Doc ID 7476 Rev 6  
3/12  
Characteristics  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Figure 3.  
Average and DC on-state current  
versus ambient temperature  
(DPAK)  
Figure 4.  
Relative variation of thermal  
impedance junction to case versus  
pulse duration  
I
(A)  
T(AV)  
K=[Z  
/R  
]
th(j-c) th(j-c)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.5  
Recommended pad layout,  
FR4 printed circuit board  
D.C.  
α = 180°  
0.2  
0.1  
t (s)  
p
T
(°C)  
amb  
1E-3  
1E-2  
1E-1  
1E+0  
0
25  
50  
75  
100  
125  
Figure 5.  
Relative variation of thermal  
impedance junction to ambient  
versus pulse duration (DPAK)  
Figure 6.  
Relative variation of gate trigger  
current and holding current versus  
junction temperature for TS820  
K=[Z  
/R  
]
th(j-a) th(j-a)  
I
,I ,I [T ] / I ,I ,I [T =25°C]  
H L j GT H L j  
GT  
1.00  
0.10  
0.01  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Recommended pad layout,  
FR4 printed circuit board  
IGT  
DPAK  
IH & IL  
RGK = 1kΩ  
TO-220AB / IPAK  
T (°C)  
j
t (s)  
p
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
5E+2  
Figure 7.  
Relative variation of gate trigger  
and holding current versus junction  
temperature  
Figure 8.  
Relative variation of holding  
current versus gate-cathode  
resistance (typical values)  
I [R ] / I [R =1kΩ]  
H
GK  
H
GK  
I
,I ,I [T ] / I ,I ,I [T =25°C]  
GT  
H
L
j
GT  
H
L
j
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Tj = 25°C  
TS8  
TN8 and TYNx8  
IGT  
IH & IL  
T (°C)  
j
R
(kΩ)  
GK  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
1E-2  
1E-1  
1E+0  
1E+1  
4/12  
Doc ID 7476 Rev 6  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Characteristics  
Figure 9.  
Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity  
versus gate-cathode resistance  
(typical values) for TS820  
versus gate-cathode capacitance  
(typical values) for TS820  
dV/dt[R ] / dV/dt[R =220Ω]  
dV/dt[C ] / dV/dt[R =220Ω]  
GK GK  
GK  
GK  
10.00  
1.00  
0.10  
0.01  
15.0  
12.5  
10.0  
7.5  
Tj = 125°C  
VD = 0.67 x VDRM  
VD = 0.67 x VDRM  
Tj = 125°C  
RGK = 220Ω  
5.0  
2.5  
R
(kΩ)  
GK  
C
(nF)  
GK  
0.0  
0
20  
40  
60  
80  
100 120 140 160 180 200 220  
0
200  
400  
600  
800 1000 1200 1400 1600 1800 2000  
Figure 11. Surge peak on-state current versus Figure 12. Non-repetitive surge peak on-state  
number of cycles  
current and corresponding values  
of I t  
2
I
(A), I2t (A2s)  
TSM  
I
(A)  
TSM  
1000  
100  
10  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tj initial = 25°C  
ITSM  
tp=10ms  
One cycle  
TYN08  
TYN08  
dI/dt limitation  
Sinusoidal pulse width tp < 10 ms  
Non repetitive  
Tj initial=25°C  
TN8 / TS8  
TN8 / TS8  
TYN08  
Repetitive  
TC=110°C  
I2t  
TN8 / TS8  
Number of cycles  
t (ms)  
p
1
10  
100  
1000  
0.01  
0.10  
1.00  
10.00  
Figure 13. On-state characteristics (maximum Figure 14. Thermal resistance junction to  
values)  
ambient versus copper surface  
under tab (DPAK)  
R (°C/W)  
th(j-a)  
I
(A)  
TM  
100  
80  
60  
40  
20  
0
50.0  
10.0  
Tj max.:  
Vt0=0.85V  
Rd=46mΩ  
Epoxy printed circuit board FR4  
copper thickness = 35 µm  
Tj=max  
1.0  
0.1  
Tj=25°C  
S(cm²)  
V
(V)  
TM  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Doc ID 7476 Rev 6  
5/12  
Ordering information scheme  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
2
Ordering information scheme  
Figure 15. TN8 series  
TN  
8 05 - 600 B (-TR)  
Standard SCR series  
Current  
8 = 8A  
Sensitivity  
05 = 5mA  
15 = 15mA  
Voltage  
600 = 600V  
800 = 800V  
Package  
B = DPAK  
H = IPAK  
Packing mode  
Blanck = Tube  
-TR = Tape & Reel  
Figure 16. TS8 series  
TS  
8 20 - 600 B (-TR)  
Sensitive SCR series  
Current  
8 = 8A  
Sensitivity  
20 = 200µA  
Voltage  
600 = 600V  
700 = 700V  
Package  
B = DPAK  
H = IPAK  
T = TO-220AB  
Packing mode  
Blanck = Tube  
-TR = Tape & Reel  
Figure 17. TYNx08 series  
TYN  
6
08 RG  
Standard SCR series  
Voltage  
6 = 600V  
8 = 800V  
10 = 100V  
Current  
8 = 8A  
Packing mode  
RG = Tube  
6/12  
Doc ID 7476 Rev 6  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Package information  
3
Package information  
●
●
Epoxy meets UL94, V0  
Lead-free packages  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
®
ECOPACK is an ST trademark.  
Table 6.  
DPAK dimensions  
Dimensions  
Millimeters  
Min. Max.  
Ref.  
Inches  
Min. Max.  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
E
A
B2  
C2  
L2  
B2  
C
D
R
H
L4  
C2  
D
A1  
R
B
G
C
E
A2  
G
0.60 MIN.  
H
V2  
L2  
L4  
V2  
0.80 typ.  
0.031 typ.  
0.60  
0°  
1.00  
8°  
0.023  
0°  
0.039  
8°  
Figure 18. Footprint (dimensions in mm)  
1.6  
6.7  
3
3
2.3  
6.7  
2.3  
1.6  
Doc ID 7476 Rev 6  
7/12  
Package information  
Table 7.  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Dimensions  
IPAK dimensions  
Ref.  
Millimeters  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
2.20  
2.40 0.086  
1.10 0.035  
1.30 0.027  
0.90 0.025  
5.40 0.204  
0.95  
0.094  
0.043  
0.051  
0.035  
0.212  
0.037  
A1 0.90  
A3 0.70  
B
0.64  
A
E
B2 5.20  
C2  
B2  
B3  
B5  
L2  
0.30  
0.035  
D
C
0.45  
0.60 0.017  
0.60 0.019  
6.20 0.236  
6.60 0.252  
0.023  
0.023  
0.244  
0.260  
C2 0.48  
H
B3  
L1  
L
D
E
6
A1  
B
V1  
6.40  
e
2.28  
0.090  
0.634  
B5  
C
e
G
H
4.40  
4.60 0.173  
0.181  
A3  
G
16.10  
L
9
9.40 0.354  
1.20 0.031  
1
0.370  
0.047  
L1  
L2  
V1  
0.8  
0.80  
10°  
0.031 0.039  
10°  
8/12  
Doc ID 7476 Rev 6  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Package information  
Dimensions  
Table 8.  
TO-220AB dimensions (for TS820-xxxT)  
Ref.  
Millimeters  
Inches  
Min.  
Max.  
Min.  
Max.  
A
C
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.181  
0.051  
0.107  
0.027  
0.034  
0.066  
0.066  
0.202  
0.106  
0.409  
A
H2  
D
Dia  
C
E
L5  
L7  
F
F1  
F2  
G
L6  
L4  
L2  
F2  
F1  
D
L9  
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
16.4 typ.  
0.645 typ.  
F
M
13  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.259  
0.154  
G1  
E
2.65  
15.25  
6.20  
3.50  
2.95  
15.75  
6.60  
3.93  
G
2.6 typ.  
0.102 typ.  
Diam.  
3.75  
3.85  
0.147  
0.151  
Doc ID 7476 Rev 6  
9/12  
Package information  
Table 9.  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
TO-220AB dimensions (for TYNx8 series)  
Dimensions  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
Ref.  
Inches  
A
15.20  
15.90 0.598  
0.625  
a1  
3.75  
0.147  
C
B
a2 13.00  
10.00  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
Ø I  
b2  
B
L
F
b1 0.61  
b2 1.23  
A
I4  
C
4.40  
l3  
c1 0.49  
c2 2.40  
c2  
a1  
l2  
a2  
e
F
2.40  
6.20  
M
c1  
b1  
ØI 3.75  
e
I4 15.80 16.40 16.80 0.622 0.646 0.661  
L
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
l2  
l3  
M
2.60  
0.102  
10/12  
Doc ID 7476 Rev 6  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Ordering information  
4
Ordering information  
Table 10. Ordering information  
Order code(1)  
Marking(1)  
Package  
Weight Base qty Delivery mode  
TN805-x00B  
TN805-x00B-TR  
TN805-x00H  
TN815-x00B  
TN815-x00B-TR  
TN815-x00H  
TS820-x00B  
TS820-x00B-TR  
TS820-x00H  
TS820-x00T  
TN805x00  
TN805x00  
TN805x00  
TN815x00  
TN815x00  
TN815x00  
TS820x00  
TS820x00  
TS820x00  
TS820x00T  
TYNx08  
DPAK  
DPAK  
0.3 g  
0.3 g  
0.4 g  
0.3 g  
0.3 g  
0.4 g  
0.3 g  
0.3 g  
0.4 g  
2.3 g  
2.3 g  
75  
2500  
75  
Tube  
Tape and reel  
Tube  
IPAK  
DPAK  
75  
Tube  
DPAK  
2500  
75  
Tape and reel  
Tube  
IPAK  
DPAK  
75  
Tube  
DPAK  
2500  
75  
Tape and reel  
Tube  
IPAK  
TO-220AB  
TO-220AB  
50  
Tube  
TYNx08RG  
50  
Tube  
1. x (6, 7, 8, or 10) depends on voltage  
5
Revision history  
Table 11. Document revision history  
Date  
Revision  
Changes  
Apr-2002  
4A  
Last update.  
TO-220AB delivery mode changed from bulk to tube.  
ECOPACK statement added.  
13-Feb-2006  
22-Jan-2010  
5
6
Alpha definition updated in Figure 1. Thermal resistance,  
junction to case, updated in Table 5.  
Doc ID 7476 Rev 6  
11/12  
TN805, TN815, TS820, TYN608, TYN808, TYN1008  
Please Read Carefully:  
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12/12  
Doc ID 7476 Rev 6  
厂商 型号 描述 页数 下载

STMICROELECTRONICS

 		TYN05 晶闸管[ THYRISTORS ] 4 页

STMICROELECTRONICS

 		TYN0510 SCR[ SCR ] 4 页

STMICROELECTRONICS

 		TYN0510/F2 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

 		TYN0510/F3 [ 10A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

STMICROELECTRONICS

 		TYN0510/F5 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

 		TYN0512 高浪涌能力高通态电流高稳定性和可靠性[ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ] 5 页

STMICROELECTRONICS

 		TYN0512/F3 [ 12A, 50V, SCR, TO-220, TO-220, 2 PIN ] 5 页

STMICROELECTRONICS

 		TYN0512/F5 [ 12A, 50V, SCR, TO-220, TO-220, 3 PIN ] 5 页

STMICROELECTRONICS

 		TYN0516 可控硅16A[ 16A SCRs ] 7 页

STMICROELECTRONICS

 		TYN0516/F3 [ 16A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

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