VTS40100CT
Vishay General Semiconductor
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TO-220AB
Ultra Low V = 0.375 V at I = 5 A
F
F
Major Ratings and Characteristics
IF(AV
VRRM
IFSM
)
2 x 20 A
100 V
3
250 A
2
1
VF at IF = 20 A
TJ max.
0.61 V
150 °C
PIN 1
PIN 3
PIN 2
CASE
Features
Mechanical Data
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
Mounting Torque: 10 in-lbs Maximum
Typical Applications
For use in high frequency inverters, switching power
supplies, freewheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
VRRM
VTS40100CT
100
Unit
V
Maximum repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
VRMS
VR
70
V
V
A
100
Maximum average forward rectified current
(see Fig. 1)
per device
per leg
IF(AV)
40
20
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per leg
IFSM
IRRM
250
A
A
Peak repetitive reverse current per leg
at tp = 2 µs, 1 kHz
1.0
Voltage rate of change (rated VR)
dv/dt
10000
V
Operating junction and storage temperature range
TJ, TSTG
- 20 to + 150
°C
Document Number 88926
08-Dec-05
www.vishay.com
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