WT-Z106N-AU4
Zener Diode Chips for ESD Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4
2. Structure:
2-1 Planar type: N/P Diode
2-2
Electrodes:
Top side:Gold Pad.(Cathode)
Back side:Gold Layer.(Anode)
3. Size:
3-1 Chip size: 6.88 mils x 6.88 mils (175 µm x 175 µm).
3-2 Chip thickness: 3.3 ± 0.6 mils (85 µm ± 15 µm).
3-3 Active area: 4.1 mils x 4.1 mils (105 µm x 105 µm).
3-4 Bonding pad: 4.5 mils x 4.5mils (115 µm x 115 µm).
3-5 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25ºC)
Parameter
Symbol
Vz
Condition
Iz=5mA
Min.
5.7
Typ.
-
Max.
6.7
Unit
V
Zener Voltage
Reverse Leakage
Current
IR
nA
100
VR=4V
-
-
-
-
-
Vf
IF=20mA
V
1.2
-
Forward Voltage
Electrostatic
Discharge
HBM
MIL-STD883
ESD
KV
8
5. Drawing:
Bonding pad
Back side
Top side
N
P-sub
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Http://www.weitron.com.tw
24-Nov-05
