请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

ZXTN25020BFH

型号：

ZXTN25020BFH

描述：

20V ， SOT23 ， NPN型中功率晶体管[ 20V, SOT23, NPN medium power transistor ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

391 K

下载PDF手册
ZXTN25020BFH  
20V, SOT23, NPN medium power transistor  
Summary  
BV  
BV  
BV  
> 50V  
> 20V  
> 3V  
CEX  
CEO  
ECO  
I
= 4.5A  
C(cont)  
V
< 45 mV @ 1A  
CE(sat)  
CE(sat)  
R
= 27 m⍀  
P = 1.25W  
D
Complementary part number ZXTP25020BFH  
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
•
•
•
•
•
High power dissipation SOT23 package  
High peak current  
Low saturation voltage  
50V forward blocking voltage  
3V reverse blocking voltage  
E
B
Applications  
•
•
•
MOSFET gate drivers  
Motor control  
C
DC-DC converters  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per  
reel  
ZXTN25020BFHTA  
7
8
3,000  
Device marking  
1B1  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTN25020BFH  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
50  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
50  
20  
3
V
V
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
V
7
V
(c)  
I
I
4.5  
1
A
A
A
W
C
B
Continuous collector current  
Base current  
Peak pulse current  
(a)  
I
10  
0.73  
CM  
P
P
P
P
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
=25°C  
D
D
D
D
amb  
amb  
amb  
amb  
5.84  
1.05  
mW/°C  
W
(b)  
(c)  
(d)  
8.4  
mW/°C  
W
1.25  
9.6  
mW/°C  
W
1.81  
14.5  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
- 55 to 150  
j
stg  
Thermal graphs  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
R
R
R
171  
°C/W  
⍜JA  
⍜JA  
⍜JA  
⍜JA  
Junction to ambient  
(b)  
119  
100  
69  
°C/W  
°C/W  
°C/W  
Junction to ambient  
(c)  
Junction to ambient  
(d)  
Junction to ambient  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTN25020BFH  
Characteristics  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTN25020BFH  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
Collector-emitter breakdown  
voltage (forward blocking)  
BV  
BV  
50  
50  
90  
90  
V
I = 100␮A  
C
CBO  
CEX  
I = 100␮A, R < 1k⍀ or  
C BE  
-1V < V < 0.25V  
BE  
(*)  
Collector-emitter breakdown  
voltage (base open)  
Emitter-base breakdown  
voltage  
Emitter-collector breakdown  
voltage (reverse blocking)  
BV  
BV  
BV  
20  
7
27  
8
V
V
V
CEO  
EBO  
ECX  
I = 10mA  
C
I = 100␮A  
E
6
7
I = 100␮A, R < 1k⍀ or  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown  
voltage (base open)  
Collector-base cut-off current  
BV  
3
4.7  
<1  
V
I = 100␮A,  
E
ECO  
I
50  
20  
nA  
␮A  
V
V
= 40V  
= 40V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector-emitter cut-off current I  
-
100  
nA  
V
= 40V; R < 1k⍀ or  
CE BE  
CEX  
-1V < V < 0.25V  
BE  
Emitter-base cut-off current  
I
<1  
35  
50  
45  
nA  
V
= 5.6V  
EB  
EBO  
(*)  
Collector-emitter saturation  
voltage  
V
mV  
CE(sat)  
I = 1A, I = 100mA  
C
B
(*)  
55  
80  
mV  
mV  
mV  
mV  
I = 1A, I = 20mA  
C
B
(*)  
90  
115  
240  
145  
I = 2A, I = 40mA  
C
B
(*)  
175  
120  
910  
825  
200  
210  
160  
70  
I = 4.5A, I = 90mA  
C
B
(*)  
I = 4.5A, I = 450mA  
C
B
(*)  
Base-emitter saturation voltage  
Base-emitter turn-on voltage  
V
V
1000 mV  
I = 4.5A, I = 90mA  
BE(sat)  
BE(on)  
FE  
C
B
(*)  
900  
300  
mV  
I = 4.5A, V = 2V  
C
CE  
(*)  
Static forward current transfer  
ratio  
h
100  
100  
75  
I = 10mA, V = 2V  
C
CE  
(*)  
I = 1A, V = 2V  
C
CE  
(*)  
I = 4.5A, V = 2V  
C
CE  
(*)  
30  
I = 10A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
185  
MHz I = 50mA, V = 10V  
T
C
CE  
f = 100MHz  
(*)  
C
22.7  
30  
pF  
OBO  
V
V
= 10V, f = 1MHz  
= 10V.  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
87  
119  
146  
61  
ns  
ns  
ns  
ns  
d
I = 1A,  
C
r
s
f
I
= I = 10mA.  
B2  
B1  
Storage time  
Fall time  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTN25020BFH  
Typical characteristics  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTN25020BFH  
Package outline - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
厂商 型号 描述 页数 下载

ZETEX

 		ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

 		ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

 		ZXT1053AKQTC [ 暂无描述 ] 6 页

ZETEX

 		ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

 		ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

ZETEX

 		ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

 		ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

 		ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

 		ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

 		ZXT10N15DE6TC 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.202296s