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ZXTN25020DFHTA

型号：

ZXTN25020DFHTA

描述：

20V SOT23 NPN中功率晶体管[ 20V SOT23 NPN medium power transistor ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

257 K

下载PDF手册
ZXTN25020DFH  
20V SOT23 NPN medium power transistor  
Summary  
BV  
BV  
> 100V; BV  
> 5V;  
> 20V  
(BR)CEO  
CEX  
ECO  
I
= 4.5A  
C(CONT)  
R
= 28 m⍀ typical  
CE(sat)  
V
< 43 mV @ 1A;  
CE(sat)  
P = 1.25W  
D
Complementary part number ZXTP25020DFH  
Description  
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
Features  
•
•
•
•
•
Higher power dissipation SOT23 package  
High peak current  
Low saturation voltage  
100V forward blocking voltage  
5V reverse blocking voltage  
Applications  
E
B
•
•
•
•
•
DC - DC converters  
MOSFET and IGBT gate driving  
LED driver  
C
Motor drive  
Relay, lamp and solenoid drive  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
Quantity per reel  
ZXTN25020DFHTA  
7
8mm  
3000  
Device marking  
016  
Issue 1 - February 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTN25020DFH  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
100  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
100  
20  
5
V
V
V
V
A
A
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
7
(c)  
I
4.5  
15  
Continuous collector current  
C
Peak pulse current  
I
CM  
(a)  
P
P
P
P
0.73  
5.84  
W
mW/°C  
D
D
D
D
Power dissipation at T =25°C  
Linear Derating Factor  
A
(b)  
(c)  
(d)  
1.05  
8.4  
W
mW/°C  
Power dissipation at T =25°C  
A
Linear derating factor  
1.25  
9.6  
W
mW/°C  
Power dissipation at T =25°C  
A
Linear derating factor  
1.81  
14.5  
W
mW/°C  
Power dissipation at T =25°C  
A
Linear derating factor  
Operating and storage temperature range  
T , T  
- 55 to 150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
R
R
R
171  
°C/W  
⍜JA  
⍜JA  
⍜JA  
⍜JA  
Junction to ambient  
(b)  
119  
100  
69  
°C/W  
°C/W  
°C/W  
Junction to ambient  
(c)  
Junction to ambient  
(d)  
Junction to ambient  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 1 - February 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTN25020DFH  
Characteristics  
Issue 1 - February 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTN25020DFH  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
AMB  
Symbol Min. Typ. Max. Unit Conditions  
Parameter  
Collector base breakdown voltage BV  
100  
100  
125  
120  
V
I = 100␮A  
C
CBO  
CEX  
Collector emitter breakdown  
voltage (forward blocking)  
BV  
I = 100␮A, R < 1k⍀ or  
C BE  
-1V < V < 0.25V  
BE  
(*)  
Collector emitter breakdown  
voltage (base open)  
BV  
BV  
20  
6
35  
8
V
V
CEO  
ECX  
I = 10mA  
C
Emitter-collector breakdown  
voltage (reverse blocking)  
I = 100␮A, R < 1k⍀ or  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown  
voltage (base open)  
BV  
5
7
6
V
V
I = 100mA,  
E
ECO  
EBO  
Emitter base breakdown voltage BV  
Collector cut-off current  
8.3  
<1  
I = 100mA  
E
I
50  
20  
nA  
␮A  
V
V
= 80V  
= 80V, T  
CBO  
CB  
CB  
= 100°C  
AMB  
Collector emitter cut-off current I  
-
100  
nA  
V
= 80V; R < 1k⍀ or  
CE BE  
CEX  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
I
<1  
35  
50  
43  
nA  
V
= 5.6V  
EB  
EBO  
(*)  
Collector emitter saturation  
voltage  
V
mV  
CE(sat)  
I = 1A, I = 100mA  
C B  
(*)  
55  
90  
70  
mV  
mV  
mV  
mV  
mV  
I = 1A, I = 20mA  
C
B
(*)  
(*)  
110  
170  
150  
265  
I = 2A, I = 40mA  
C
B
125  
125  
205  
I = 2A, I = 20mA  
C
B
(*)  
I = 4,5A, I = 450mA  
C
B
(*)  
I = 4.5A, I = 90mA  
C
B
(*)  
Base emitter saturation voltage  
Base emitter turn-on voltage  
V
V
900 1000 mV  
BE(sat)  
BE(on)  
FE  
I = 4.5A, I = 90mA  
C
B
(*)  
820  
450  
380  
170  
15  
900  
900  
mV  
I = 4.5A, V = 2V  
C
CE  
(*)  
Static forward current transfer  
ratio  
h
300  
250  
120  
I = 10mA, V = 2V  
C
CE  
(*)  
I = 2A, V = 2V  
C
CE  
(*)  
I = 4.5A, V = 2V  
C
CE  
(*)  
I = 15A, V = 2V  
C
CE  
Transition frequency  
f
215  
MHz I = 50mA, V = 10V  
T
C
CE  
f = 100MHz  
(*)  
Output capacitance  
Turn-on time  
C
16.5  
140  
pF  
ns  
OBO  
V
V
= 10V, f = 1MHz  
CB  
CC  
t
= 10V. I = 1A,  
C
(on)  
I
= I = 10mA.  
B2  
B1  
Turn-off time  
t
425  
ns  
(off)  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.  
Issue 1 - February 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTN25020DFH  
Characteristics  
Issue 1 - February 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTN25020DFH  
Package outline - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 1 - February 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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