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ZXTN25020DGTA

型号:

ZXTN25020DGTA

描述:

在SOT223 20V NPN高增益晶体管[ 20V NPN high gain transistor in SOT223 ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

6 页

PDF大小:

212 K

ZXTN25020DG  
20V NPN high gain transistor in SOT223  
Summary  
BV  
BV  
BV  
> 100V  
> 20V  
> 6V  
CEX  
CEO  
ECX  
I
= 7A  
C(cont)  
V
< 48mV @ 1A  
CE(sat)  
CE(sat)  
R
= 31mΩ  
P = 3.0W  
D
Complementary part number ZXTP25020DG  
Description  
C
E
Packaged in the SOT223 outline this new low saturation NPN transistor  
offers extremely low on state losses making it ideal for use in DC-DC  
circuits and various driving and power management functions.  
B
Features  
Higher power dissipation SOT223 package  
High gain  
High peak current  
Low saturation voltage  
100V forward blocking voltage  
6V reverse blocking voltage  
Applications  
E
C
B
DC - DC converters  
Motor drive  
C
Relay, lamp and solenoid drive  
Regulator circuits  
Ordering information  
Pinout - top view  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXTN25020DGTA  
Device marking  
7
12  
1000  
ZXTN25  
020D  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
1
www.zetex.com  
ZXTN25020DG  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base voltage  
V
100  
V
CBO  
Collector-Emitter voltage (forward blocking)  
Collector-Emitter voltage  
V
V
V
V
100  
20  
6
V
V
V
V
A
A
A
CEX  
CEO  
ECX  
EBO  
Emitter-Collector voltage (reverse blocking)  
Emitter-Base voltage  
7
(c)  
I
7
Continuous Collector current  
C
Base current  
I
1
B
Peak pulse current  
I
15  
CM  
(a)  
P
P
P
P
P
1.2  
9.6  
W
Power dissipation at T =25°C  
D
D
D
D
D
A
mW/°C  
Linear derating factor  
(b)  
1.6  
W
Power dissipation at T =25°C  
A
12.8  
mW/°C  
Linear derating factor  
(c)  
3.0  
24  
W
Power dissipation at T =25°C  
A
mW/°C  
Linear derating factor  
(d)  
5.3  
42  
W
Power dissipation at T =25°C  
A
mW/°C  
Linear derating factor  
(e)  
7.3  
58  
W
Power dissipation at T =25°C  
C
mW/°C  
Linear derating factor  
Operating and storage temperature range  
T , T  
-55 to 150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
104  
°C/W  
Junction to ambient  
JA  
(b)  
R
78  
42  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to ambient  
JA  
(c)  
R
Junction to ambient  
JA  
(d)  
R
23.5  
16  
Junction to ambient  
JA  
(e)  
R
Junction to case  
JC  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(d)As (c) above measured at t<5 seconds.  
(e) Junction to case (collector tab). Typical  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
2
www.zetex.com  
ZXTN25020DG  
Thermal characteristics  
1m  
100µ  
10µ  
VCE(sat)  
Failure may occur in this region  
10  
Limit  
DC  
BVBR(CEO) = 20V  
1
1s  
100ms  
10ms  
1ms  
100µs  
100m  
1µ  
Single Pulse. Tamb=25°C  
BVBR(CEV) = 100V  
60 80 100  
See note (c)  
10m  
100n  
100m  
1
10  
0
20  
40  
VCE Collector-Emitter Voltage (V)  
VCE Collector-Emitter Voltage (V)  
Safe Operating Area  
Safe Operating Area  
Single Pulse. Tamb=25°C  
See note (c)  
40  
30  
See note (c)  
100  
10  
1
D=0.5  
D=0.2  
20  
10  
0
Single Pulse  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Width (s)  
Pulse Power Dissipation  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
See note (c)  
See note (b)  
See note (a)  
0
20 40 60 80 100 120 140 160  
Temperature (°C)  
Derating Curve  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
3
www.zetex.com  
ZXTN25020DG  
Electrical characteristics (at T  
Parameter  
= 25°C unless otherwise stated).  
amb  
Symbol Min.  
Typ.  
Max.  
Unit Conditions  
Collector-Base breakdown BV  
voltage  
100  
125  
V
I = 100A  
C
CBO  
CEX  
Collector-Emitter  
breakdown voltage  
(forward blocking)  
BV  
100  
120  
V
I = 100A, R < 1kΩ  
C
BE  
or  
-1V < V < 0.25V  
BE  
(*)  
I = 10mA  
C
Collector-Emitter  
breakdown voltage  
Emitter-Collector  
breakdown voltage  
(reverse blocking)  
BV  
BV  
20  
6
35  
V
V
CEO  
ECX  
8.3  
I = 100A, R < 1kΩ  
E
BC  
or  
0.25V > V  
> -0.25V  
BC  
Emitter-Collector  
breakdown voltage  
(reverse blocking)  
Emitter-Base breakdown  
voltage  
BV  
BV  
5
7
6.1  
V
V
I = 100A  
E
ECO  
EBO  
8.35  
<1  
I = 100A  
E
Collector-Base cut-off  
current  
I
I
50  
0.5  
nA  
A  
V
V
V
= 100V  
= 100V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector-Emitter cut-off  
current  
100  
nA  
= 100V, R < 1kΩ  
CE BE  
CEX  
or  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
I
<1  
40  
60  
100  
130  
225  
1090  
50  
48  
75  
120  
180  
290  
1150  
nA  
mV  
mV  
mV  
mV  
mV  
mV  
V
= 5.6V  
EB  
EBO  
(*)  
Collector-Emitter  
saturation voltage  
V
I = 1A, I = 100mA  
CE(sat)  
C
B
(*)  
I = 1A, I = 20mA  
C
B
(*)  
I = 2A, I = 40mA  
C
B
(*)  
I = 2A, I = 20mA  
C
B
(*)  
(*)  
I = 7A, I = 700mA  
C
B
Base-Emitter saturation  
voltage  
Base-Emitter turn-on  
voltage  
Static forward current  
transfer ratio  
V
V
h
I = 7A, I = 700mA  
BE(sat)  
BE(on)  
C
B
(*)  
950  
1050  
900  
mV  
I = 7A, V = 2V  
C
CE  
(*)  
300  
250  
50  
450  
360  
85  
I = 10mA, V = 2V  
FE  
C
CE  
(*)  
I = 2A, V = 2V  
C
CE  
(*)  
I = 7A, V = 2V  
C
CE  
(*)  
15  
I = 15A, V = 2V  
C
CE  
Transition frequency  
f
215  
MHz I = 50mA, V = 10V  
T
C
CE  
f = 100MHz  
(*)  
Input capacitance  
C
C
152  
pF  
pF  
V
V
= 0.5V, f = 1MHz  
ibo  
EB  
CB  
(*)  
Output capacitance  
16.5  
25  
= 10V, f = 1MHz  
obo  
Delay time  
Rise time  
t
t
t
t
67.7  
72.2  
361  
ns  
ns  
ns  
ns  
d
I = 1A, V = 10V,  
C
CC  
r
s
f
I
= -I = 10mA  
B2  
B1  
Storage time  
Fall time  
63.9  
NOTES:  
(*) Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
4
www.zetex.com  
ZXTN25020DG  
Typical characteristics  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
5
www.zetex.com  
ZXTN25020DG  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2008 Published by Zetex Semiconductors plc  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
6
www.zetex.com  
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