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ZXTN25050DFHTA

型号：

ZXTN25050DFHTA

描述：

50V ， SOT23 ， NPN型中功率晶体管[ 50V, SOT23, NPN medium power transistor ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

416 K

下载PDF手册
ZXTN25050DFH  
50V, SOT23, NPN medium power transistor  
Summary  
BV  
BV  
BV  
> 150V  
> 50V  
> 5V  
CEX  
CEO  
ECO  
I
= 4A  
C(cont)  
V
< 60mV @ 1A  
CE(sat)  
CE(sat)  
R
= 40m⍀  
P = 1.25W  
D
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
•
•
•
•
•
•
High power dissipation SOT23 package  
High peak current  
High gain  
Low saturation voltage  
150V forward blocking voltage  
5V reverse blocking voltage  
E
B
Applications  
C
•
•
•
•
•
MOSFET gate drivers  
Power switches  
Motor control  
Pinout - top view  
DC fans  
DC-DC converters  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per  
reel  
ZXTN25050DFHTA  
7
8
3,000  
Device marking  
017  
Issue 3 - September 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTN25050DFH  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
150  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
150  
50  
5
V
V
V
V
A
A
A
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
7
(c)  
I
I
4
Continuous collector current  
C
B
Base current  
1
Peak pulse current  
I
10  
CM  
(a)  
P
P
P
P
0.73  
5.84  
W
mW/°C  
D
D
D
D
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
=25°C  
amb  
amb  
amb  
amb  
(b)  
(c)  
(d)  
1.05  
8.4  
W
mW/°C  
Power dissipation at T  
Linear derating factor  
1.25  
9.6  
W
mW/°C  
Power dissipation at T  
Linear derating factor  
1.81  
14.5  
W
mW/°C  
Power dissipation at T  
Linear derating factor  
Operating and storage temperature range  
T , T  
- 55 to 150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
R
R
R
171  
°C/W  
⍜JA  
⍜JA  
⍜JA  
⍜JA  
Junction to ambient  
(b)  
119  
100  
69  
°C/W  
°C/W  
°C/W  
Junction to ambient  
(c)  
Junction to ambient  
(d)  
Junction to ambient  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 3 - September 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTN25050DFH  
Characteristics  
Issue 3 - September 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTN25050DFH  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Symbol Min. Typ. Max. Unit Conditions  
Parameter  
Collector-base breakdown voltage BV  
150  
150  
180  
180  
V
V
I = 100␮A  
C
CBO  
CEX  
Collector-emitter breakdown  
voltage (forward blocking)  
BV  
I = 100␮A, R Յ 1k⍀ or  
C BE  
-1V < V < 0.25V  
BE  
(*)  
Collector-emitter breakdown  
voltage (base open)  
BV  
BV  
50  
5
67  
8
V
V
CEO  
ECX  
I = 10mA  
C
Emitter-collector breakdown  
voltage (reverse blocking)  
I = 100␮A, R Յ 1k⍀ or  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown  
voltage (base open)  
BV  
BV  
5
7
7.4  
8.3  
<1  
V
V
I = 100␮A,  
E
ECO  
EBO  
Emitter-base breakdown  
voltage  
I = 100␮A  
E
Collector cut-off current  
I
I
I
50  
20  
nA  
␮A  
V
V
= 150V  
= 150V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector-emitter cut-off  
current  
-
100  
nA  
V
= 150V; R Յ 1k⍀ or  
CE BE  
CEX  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
<1  
50  
50  
60  
nA  
V
= 5.6V  
EB  
EBO  
(*)  
Collector-emitter saturation  
voltage  
V
mV  
CE(sat)  
I = 1A, I = 100mA  
C
B
(*)  
160  
180  
190  
160  
970  
260  
250  
mV  
mV  
mV  
mV  
mV  
I = 1A, I = 10mA  
C
B
(*)  
I = 2A, I = 40mA  
C
B
(*)  
235  
I = 3,5A, I = 175mA  
C
B
(*)  
210  
I = 4A, I = 400mA  
C
B
(*)  
Base-emitter saturation  
voltage  
V
V
1070  
BE(sat)  
I = 4A, I = 400mA  
C
B
(*)  
Base-emitter turn-on voltage  
870  
450  
410  
40  
970  
900  
mV  
BE(on)  
FE  
I = 4A, V = 2V  
C
CE  
(*)  
Static forward current transfer h  
ratio  
300  
240  
20  
I = 10mA, V = 2V  
C
CE  
(*)  
I = 1A, V = 2V  
C
CE  
(*)  
I = 4A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
200  
MHz I = 50mA, V = 10V  
T
C
CE  
f = 100MHz  
(*)  
C
12  
20  
pF  
OBO  
V
V
= 10V, f = 1MHz  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
65  
ns  
ns  
ns  
ns  
= 10V. I = 1A,  
C
= I = 10mA.  
B2  
(d)  
I
B1  
111  
429  
140  
(r)  
(s)  
(f)  
Storage time  
Fall time  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.  
Issue 3 - September 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTN25050DFH  
Typical characteristics  
Issue 3 - September 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTN25050DFH  
Package outline - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 3 - September 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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