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ZXTN25060BFHTA

型号：

ZXTN25060BFHTA

描述：

60V ， SOT23 ， NPN型中功率晶体管[ 60V, SOT23, NPN medium power transistor ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

390 K

下载PDF手册
ZXTN25060BFH  
60V, SOT23, NPN medium power transistor  
Summary  
BV  
BV  
BV  
> 150V  
> 60V  
> 6V  
CEX  
CEO  
ECO  
I
= 3.5A  
C(cont)  
V
< 65 mV @ 1A  
CE(sat)  
CE(sat)  
R
= 43 m⍀  
P = 1.25W  
D
Complementary part number ZXTP25060BFH  
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
•
•
•
•
High power dissipation SOT23 package  
High peak current  
Low saturation voltage  
150V forward blocking voltage  
E
B
Applications  
C
•
•
•
Lamp, relay and solenoid drivers  
General switching in automotive and industrial applications  
Motor drive and control  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
ZXTN25060BFHTA  
7
8
3,000  
Device marking  
019  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTN25060BFH  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
150  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
150  
60  
6
V
V
V
V
A
A
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
7
(b)  
I
3.5  
10  
Continuous collector current  
C
Peak pulse current  
I
CM  
(a)  
P
P
P
P
0.73  
5.84  
W
D
D
D
D
Power dissipation at T =25°C  
Linear derating factor  
A
mW/°C  
(b)  
(c)  
(d)  
1.05  
8.4  
W
Power dissipation at T =25°C  
A
mW/°C  
Linear derating factor  
1.25  
9.6  
W
Power dissipation at T =25°C  
A
mW/°C  
Linear derating factor  
1.81  
14.5  
W
Power dissipation at T =25°C  
A
mW/°C  
Linear derating factor  
Operating and storage temperature range  
T , T  
- 55 to 150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
R
R
R
171  
°C/W  
⍜JA  
⍜JA  
⍜JA  
⍜JA  
Junction to ambient  
(b)  
119  
100  
69  
°C/W  
°C/W  
°C/W  
Junction to ambient  
(c)  
Junction to ambient  
(d)  
Junction to ambient  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTN25060BFH  
Characteristics  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTN25060BFH  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
Typ.  
Parameter  
Symbol Min.  
Max.  
Unit Conditions  
Collector-base breakdown  
voltage  
BV  
150  
190  
V
I = 100␮A  
C
CBO  
CEX  
Collector-emitter breakdown  
voltage (forward blocking)  
BV  
150  
190  
I = 100␮A, R Յ 1k⍀ or  
C BE  
-1V < V < 0.25V  
BE  
(*)  
Collector-emitter breakdown  
voltage (base open)  
BV  
BV  
60  
6
80  
8
V
V
CEO  
ECX  
I = 10mA  
C
Emitter-collector  
breakdown voltage (reverse  
blocking)  
I = 100␮A, R Յ 1k⍀ or  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector  
breakdown voltage (base  
open)  
BV  
BV  
6
7
7
V
V
I = 100␮A,  
E
ECO  
EBO  
Emitter-base breakdown  
voltage  
8
I = 100␮A  
E
Collector cut-off current  
I
I
I
<1  
50  
20  
nA  
␮A  
V
V
= 120V  
= 120V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector-emitter cut-off  
current  
-
100  
nA  
V
= 120V; RBE Յ 1k⍀ or  
CEX  
EBO  
CE  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
<1  
33  
50  
40  
nA  
V
= 5.6V  
EB  
(*)  
Collector-emitter saturation V  
voltage  
mV  
CE(sat)  
I = 0,5A, I = 50mA  
C B  
(*)  
73  
50  
95  
65  
mV  
mV  
mV  
mV  
I = 0,5A, I = 10mA  
C
B
(*)  
I = 1A, I = 100mA  
C
B
(*)  
(*)  
150  
960  
175  
1050  
I = 3.5A, I = 350mA  
C
B
Base-emitter saturation  
voltage  
V
V
BE(sat)  
BE(on)  
FE  
I = 3.5A, I = 350mA  
C B  
(*)  
Base-emitter turn-on  
voltage  
865  
950  
300  
mV  
I = 3.5A, V = 2V  
C
CE  
(*)  
Static forward current  
transfer ratio  
h
100  
90  
200  
180  
40  
I = 10mA, V = 2V  
C
CE  
(*)  
I = 1A, V = 2V  
C
CE  
(*)  
25  
I = 3.5A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
185  
MHz I = 100mA, V = 5V  
T
C
CE  
f = 100MHz  
(*)  
C
11.5  
20  
pF  
OBO  
V
V
= 10V, f = 1MHz  
CB  
CC  
Turn-on time  
Turn-off time  
NOTES:  
t
t
34  
ns  
ns  
= 10V. I = 500mA,  
C
(on)  
I
= I = 50mA.  
B2  
B1  
566  
(off)  
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTN25060BFH  
Typical characteristics  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTN25060BFH  
Package outline - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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