找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

ZXTN25060BZTA

型号:

ZXTN25060BZTA

描述:

60V , SOT89 , NPN型中功率晶体管[ 60V, SOT89, NPN medium power transistor ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

8 页

PDF大小:

768 K

ZXTN25060BZ  
60V, SOT89, NPN medium power transistor  
Summary  
BV  
BV  
BV  
> 150V  
> 60V  
> 6V  
CEX  
CEO  
ECO  
I
= 5A  
C(cont)  
V
< 70mV @ 1A  
CE(sat)  
CE(sat)  
R
= 48m  
P = 2.4W  
D
Description  
C
E
Packaged in the SOT89 outline this new low saturation 60V NPN  
transistor offers extremely low on state losses making it ideal for use in  
DC-DC circuits and various driving and power management functions.  
B
Features  
Extremely low equivalent on resistance; R  
= 46mat 5A  
CE(sat)  
5 amps continuous current  
Up to 10 amps peak current  
Very low saturation voltages  
Excellent h characteristics  
FE  
E
C
B
6V reverse blocking capability  
Applications  
C
Emergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC-DC modules  
Pinout - top view  
Backlight inverters  
Power switches  
MOSFET gate drivers  
Ordering information  
Device  
Reel Size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
1000  
ZXTN25060BZTA  
7
12  
Device marking  
1C7  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXTN25060BZ  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
150  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
150  
60  
6
V
V
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
V
7
V
(c)  
I
5
A
A
A
W
Continuous collector current  
C
Base current  
Peak pulse current  
(a)  
I
1
B
I
10  
1.1  
CM  
P
P
P
P
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
= 25°C  
= 25°C  
= 25°C  
= 25°C  
D
D
D
D
amb  
amb  
amb  
amb  
8.8  
1.8  
mW/°C  
W
(b)  
(c)  
(d)  
14.4  
2.4  
mW/°C  
W
19.2  
4.46  
mW/°C  
W
35.7  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
- 55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
117  
°C/W  
Junction to ambient  
JA  
(b)  
R
68  
51  
28  
°C/W  
°C/W  
°C/W  
Junction to ambient  
JA  
(c)  
R
Junction to ambient  
JA  
(d)  
R
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXTN25060BZ  
Thermal characteristics  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXTN25060BZ  
Thermal characteristics  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXTN25060BZ  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
150  
150  
190  
190  
V
I = 100A  
C
CBO  
CEX  
Collector-emitter breakdown BV  
voltage (forward blocking)  
I = 100A, R Յ1kor  
C BE  
-1V < V < 0.25V  
BE  
(*)  
I = 10mA  
C
Collector-emitter breakdown BV  
voltage (base open)  
60  
80  
V
CEO  
Emitter-base breakdown voltage BV  
7
6
8
8
V
V
I = 100A  
E
EBO  
ECX  
Emitter-collector breakdown  
voltage (reverse blocking)  
BV  
I = 100A, R Յ1kor  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown  
voltage (base open)  
BV  
6
7
V
I = 100A,  
E
ECO  
Collector-base cut-off current  
I
I
I
<1  
50  
20  
nA  
A  
V
V
= 120V  
= 120V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector-emitter cut-off  
current  
-
100  
nA  
V
= 120V; R Յ1kor  
CE BE  
CEX  
EBO  
-1V < V < 0.25V  
BE  
Emitter-base cut-off current  
<1  
55  
50  
70  
nA  
mV  
mV  
mV  
mV  
mV  
mV  
V
= 5.6V  
EB  
(*)  
Collector-emitter saturation  
voltage  
V
I = 1A, I = 100mA  
CE(sat)  
C
B
(*)  
70  
90  
I = 1A, I = 50mA  
C
B
(*)  
(*)  
(*)  
185  
240  
230  
305  
I = 4A, I = 400mA  
C
B
I = 5A, I = 500mA  
C
B
Base-emitter saturation voltage  
Base-emitter turn-on voltage  
V
V
1020 1100  
960 1050  
I = 5A, I = 500mA  
BE(sat)  
BE(on)  
FE  
C
B
(*)  
I = 5A, V = 2V  
C
CE  
(*)  
Static forward current transfer h  
ratio  
100  
90  
200  
180  
90  
300  
I = 10mA, V = 2V  
C
CE  
(*)  
(*)  
(*)  
I = 1A, V = 2V  
C
CE  
45  
I = 2A, V = 2V  
C
CE  
20  
I = 5A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
185  
MHz I = 100mA, V = 5V  
T
C
CE  
f = 100MHz  
(*)  
C
11.5  
20  
pF  
V
V
= 10V, f = 1MHz  
OBO  
CB  
CC  
Delay time  
Rise time  
Storage time  
Fall time  
t
t
t
t
16  
15  
ns  
ns  
ns  
ns  
= 10V. I = 500mA,  
C
d
I
= I = 50mA.  
B2  
B1  
r
s
f
509  
57  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXTN25060BZ  
Typical characteristics  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXTN25060BZ  
Package outline - SOT89  
D
A
C
D1  
E
E1  
H
L
B
e
B1  
e1  
DIM  
Millimeters  
Inches  
DIM  
Millimeters  
Inches  
Min  
Max  
1.60  
0.56  
0.48  
0.44  
4.60  
2.60  
Min  
Max  
Min  
2.13  
Max  
Min  
0.084  
Max  
A
B
1.40  
0.44  
0.36  
0.35  
4.40  
2.29  
0.550  
0.017  
0.014  
0.014  
0.173  
0.090  
0.630  
0.022  
0.019  
0.019  
0.181  
0.102  
E1  
e
2.29  
0.090  
1.50 BSC  
3.00 BSC  
0.059 BSC  
0.118 BSC  
B1  
C
e1  
H
3.94  
4.25  
1.20  
-
0.155  
0.167  
0.167  
-
D
L
0.89  
-
0.155  
-
E
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXTN25060BZ  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 3 - January 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
厂商 型号 描述 页数 下载

ZETEX

ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AKQTC [ 暂无描述 ] 6 页

ZETEX

ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

ZETEX

ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

ZXT10N15DE6TC 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.222874s