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ZXTN25100BFH

型号：

ZXTN25100BFH

描述：

100V ， SOT23 ，中等功率晶体管[ 100V, SOT23, medium power transistor ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

389 K

下载PDF手册
ZXTN25100BFH  
100V, SOT23, medium power transistor  
Summary  
BV  
BV  
BV  
> 170V  
> 100V  
> 6V  
CEX  
CEO  
ECO  
I
= 3A  
C(cont)  
V
< 80mV @ 1A  
CE(sat)  
CE(sat)  
R
= 67mꢀ  
P = 1.25W  
D
Complementary part number ZXTP25100BFH  
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
•
•
•
High power dissipation SOT23 package  
Low saturation voltage  
170V forward blocking voltage  
Applications  
E
B
•
•
•
Lamp relay and solenoid drivers  
General switching in automotive and industrial applications  
Motor drive and control  
C
Ordering information  
Pinout - top view  
Quantity per reel  
3,000  
Device  
Reel size (inches)  
Tape width  
(mm)  
ZXTN25100BFHTA  
7
8
Device marking  
021  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTN25100BFH  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
170  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
170  
100  
6
V
V
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
V
7
V
(b)  
I
3
A
A
W
C
Continuous collector current  
Peak pulse current  
I
9
CM  
(a)  
P
P
P
P
0.73  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
=25°C  
D
D
D
D
amb  
amb  
amb  
amb  
5.84  
1.05  
mW/°C  
W
(b)  
(c)  
(d)  
8.4  
mW/°C  
W
1.25  
9.6  
mW/°C  
W
1.81  
14.5  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
- 55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
R
R
R
171  
°C/W  
ꢁJA  
ꢁJA  
ꢁJA  
ꢁJA  
Junction to ambient  
(b)  
119  
100  
69  
°C/W  
°C/W  
°C/W  
Junction to ambient  
(c)  
Junction to ambient  
(d)  
Junction to ambient  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTN25100BFH  
Characteristics  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTN25100BFH  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)  
Parameter  
Symbol Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
170  
220  
V
I = 100ꢂA  
C
CBO  
Collector-emitter breakdown  
voltage (forward blocking)  
BV  
170  
210  
I = 100ꢂA, R < 1kꢀ or  
C BE  
CEX  
-1V < V < 0.25V  
BE  
(*)  
Collector-emitter breakdown  
voltage (base open)  
BV  
BV  
100  
6
120  
7
V
V
CEO  
ECX  
I = 10mA  
C
Emitter-collector breakdown  
voltage (reverse blocking)  
I = 100ꢂA, R < 1kꢀ or  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown  
voltage (base open)  
BV  
BV  
6
7
8.4  
8
V
V
I = 100ꢂA,  
E
ECO  
EBO  
Emitter-base breakdown  
voltage  
I = 100ꢂA  
E
Collector cut-off current  
I
<1  
50  
20  
nA  
ꢂA  
V
V
= 136V  
= 136V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector emitter cut-off current I  
-
100  
nA  
V
= 136V; R < 1kꢀ or  
CEX  
EBO  
CE BE  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
I
<1  
40  
50  
55  
nA  
V
= 5.6V  
EB  
(*)  
(*)  
Collector-emitter saturation  
voltage  
V
mV  
CE(sat)  
I = 0,5A, I = 50mA  
C B  
100  
70  
135 mV  
I = 0,5A, I = 10mA  
C
B
(*)  
80  
mV  
I = 1A, I = 100mA  
C
B
(*)  
(*)  
200  
250 mV  
I = 3A, I = 300mA  
C
B
Base-emitter saturation voltage V  
940 1050 mV  
890 1000 mV  
BE(sat)  
BE(on)  
FE  
I = 3A, I = 300mA  
C B  
(*)  
Base-emitter turn-on voltage  
V
I = 3A, V = 2V  
C
CE  
(*)  
Static forward current transfer  
ratio  
h
100  
50  
200  
85  
300  
I = 10mA, V = 2V  
C
CE  
(*)  
I = 1A, V = 2V  
C
CE  
(*)  
20  
I = 3A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
160  
MHz I = 100mA, V = 5V  
T
C
CE  
f = 100MHz  
(*)  
C
9.4  
20  
pF  
OBO  
V
V
= 10V, f = 1MHz  
CB  
CC  
Delay time  
Rise time  
Storage time  
Fall time  
t
t
t
t
16  
55  
ns  
ns  
ns  
ns  
= 10V. I = 500mA,  
C
(d)  
I
= I = 50mA.  
B2  
B1  
(r)  
(s)  
(f)  
677  
95  
NOTES:  
(*) Measured under pulsed conditions. Pulse width ꢃ 300ꢂs; duty cycle ꢃ 2%.  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTN25100BFH  
Typical characteristics  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTN25100BFH  
Package outline - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 1 - May 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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