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ZXTP03200BZ

型号:

ZXTP03200BZ

描述:

200V PNP低VCE ( sat)的晶体管SOT- 89[ 200V PNP LOW VCE(sat ) TRANSISTOR IN SOT-89 ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

298 K

A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Case: SOT-89  
BVCEO > -200V  
BVECO > -2V  
Continuous current IC(cont) = 2A  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish  
V
R
CE(sat < -160mV @ -1A  
CE(sat)=130m  
Weight: 0.052 grams (approximate)  
PD = 2.4W  
2 Amps continuous current  
Up to 5 Amps peak current  
Very low saturation voltage  
Enhanced switching performance  
Applications  
DC-DC Convertors  
SOT-89  
Device symbol  
Pin Configuration  
Top View  
Ordering Information  
Product  
ZXTP03200BZTA  
Marking  
1N2  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
7
12  
1000  
Marking Information  
1N2 = Product type Marking Code  
1 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-220  
-200  
-7  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current (Note a)  
Base Current  
-2  
A
-1  
A
IB  
Peak Pulse Current  
-5  
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1.1  
8.8  
Unit  
W
mW /°C  
W
mW /°C  
W
mW /°C  
W
Power Dissipation at TA = 25°C (Note a)  
PD  
Linear derating factor  
1.8  
14.4  
Power Dissipation at TA = 25°C (Note b)  
PD  
PD  
PD  
PD  
Linear derating factor  
2.4  
19.2  
Power Dissipation at TA = 25°C (Note c)  
Linear derating factor  
4.46  
35.7  
Power Dissipation at TA = 25°C (Note d)  
mW /°C  
W
mW /°C  
Linear derating factor  
38.7  
309.6  
Power Dissipation at TA = 25°C (Note e)  
Linear derating factor  
Junction to Ambient (Note a)  
Junction to Ambient (Note b)  
Junction to Ambient (Note c)  
Junction to Ambient (Note d)  
Junction to Lead (Note e)  
117  
68  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
Rθ  
Rθ  
JA  
JA  
JA  
JA  
51  
28  
3.23  
Rθ  
JL  
Operating and Storage Temperature Range  
-55 to +150  
TJ, TSTG  
Notes:  
a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions  
b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.  
c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.  
d. As (c) above measured at t<5 seconds  
e. Junction to lead from collector Tab. Typical  
2 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
Thermal Characteristics and Derating information  
3 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
Min  
-220  
-220  
-220  
-7  
Typ  
-245  
-245  
-225  
-8.4  
<1  
Max  
Unit  
V
Test Condition  
IC = -100µA  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note f)  
Emitter-Base Breakdown Voltage  
V
IC = -1µA, RBE 1kΩ  
IC = -10mA  
V
V
IE = -100µA  
VCB = -200V  
VCB = -200V, Tamb = 100°C  
VEB = -6V  
-50  
-0.5  
nA  
µA  
Collector-Base Cutoff Current  
Emitter Cutoff Current  
ICBO  
IEBO  
<1  
-10  
nA  
I
I
C = -10mA, VCE = -5V  
C = -1A, VCE = -5V  
100  
100  
20  
195  
179  
50  
300  
Static Forward Current Transfer Ratio (Note f)  
Collector-Emitter Saturation Voltage (Note f)  
hFE  
IC = -2A, VCE = -5V  
C = -5A, VCE = -5V  
5
I
IC = -100mA, IB = -10mA  
IC = -500mA, IB = -25mA  
-37  
-50  
mV  
mV  
mV  
mV  
-120  
-130  
-160  
-155  
-160  
-260  
VCE(SAT)  
I
C = -1A, IB = -100mA  
IC = -2A, IB = -400mA  
IC = -2A, IB = -400mV  
IC = -2A, VCE = -5V  
VCB = -10V. f = 1MHz  
Base-Emitter Saturation Voltage (Note f)  
Base-Emitter Turn-On Voltage (Note f)  
Output Capacitance (Note f)  
-940  
-840  
31  
-1100  
-1000  
mV  
mV  
pF  
VBE(sat)  
VBE(ON)  
Cobo  
VCE = -10V, IC = -100mA  
f = 50MHz  
Transition Frequency  
105  
MHz  
fT  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
21  
18  
ns  
ns  
ns  
ns  
td  
tr  
V
CC = -50V, IC = -1A  
680  
75  
Ts  
Tf  
IB1 = -IB2 = -100mA  
Notes:  
f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle 2%  
4 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
Typical Characteristics  
5 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
Package Outline Dimensions  
Suggested Pad Layout  
6 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTP03200BZ  
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR  
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising  
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under  
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such  
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are  
represented on Diodes Incorporated website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales  
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising  
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and  
markings noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the  
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in  
the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,  
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their  
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-  
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes  
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life  
support devices or systems.  
Copyright © 2009, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
August 2009  
© Diodes Incorporated  
ZXTP03200BZ  
Document Number DS31902 Rev. 2 - 2  
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