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ZXTP2025FTA

型号：

ZXTP2025FTA

描述：

50V ， SOT23 ， PNP中等功率晶体管[ 50V, SOT23, PNP medium power transistor ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

502 K

下载PDF手册
ZXTP2025F  
50V, SOT23, PNP medium power transistor  
Summary  
V
> -50V  
(BR)CEO  
I
= -5A  
C(cont)  
R
= 30m⍀ typical  
CE(sat)  
V
< - 60mV @ -1A  
CE(sat)  
P = 1.2W  
D
Complementary part number: ZXTN2031F  
Description  
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally suited  
to applications where space is at a premium.  
Features  
•
•
•
•
•
Higher power dissipation SOT23 package  
High peak current  
Low saturation voltage  
High gain  
50V forward blocking voltage  
Applications  
•
•
•
•
•
MOSFET and IGBT gate driving  
Motor drive  
Relay, lamp and solenoid drive  
High side switches  
Pinout - top view  
DC-DC converters  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
ZXTP2025FTA  
7
8
3,000  
Device marking  
312  
Issue 3 - January 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTP2025F  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
-50  
-50  
-7.0  
-10  
-5  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Peak pulse current  
V
V
A
A
A
I
I
I
CM  
(c)  
C
B
Continuous collector current  
Base current  
-1.2  
(a)  
P
P
P
1.0  
8.0  
W
D
D
D
Power dissipation @ T =25°C  
Linear derating factor  
A
mW/°C  
(b)  
(c)  
1.2  
9.6  
W
Power dissipation @ T =25°C  
A
mW/°C  
Linear derating factor  
1.56  
12.5  
W
Power dissipation @ T =25°C  
A
mW/°C  
Linear derating factor  
Operating and storage temperature  
T :T  
-55 to +150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Value  
Unit  
(a)  
Rθ  
125  
°C/W  
JA  
Junction to ambient  
(b)  
Rθ  
104  
80  
°C/W  
°C/W  
JA  
Junction to ambient  
(c)  
Rθ  
JA  
Junction to ambient  
NOTES:  
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.  
(b)Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.  
(c) As (b) above measured at t<5secs.  
Issue 3 - January 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTP2025F  
Characteristics  
Issue 3 - January 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTP2025F  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
V
V
V
-50  
-50  
-7.0  
100  
V
I =-100µA  
C
(BR)CBO  
(BR)CEO  
(BR)EBO  
(a)  
Collector-emitter breakdown  
voltage  
70  
V
I =-10mA  
C
Emitter-base breakdown  
voltage  
8.5  
V
I =-100µA  
E
Collector-emitter cut-off  
current  
I
-20  
nA  
V
V
=-40V,  
= 1V  
CEV  
CE  
BE  
Collector-base cut-off current  
Emitter-base cut-off current  
I
I
-20  
-10  
nA  
nA  
V
V
=-40V  
CBO  
CB  
EB  
=-6V  
EBO  
(a)  
Static forward current transfer  
ratio  
H
180  
200  
70  
380  
350  
120  
30  
FE  
I =-10mA, V =-2V  
C
CE  
(a)  
560  
I =-500mA, V =-2V  
C
CE  
(a)  
Ic=-5A, V =-2V  
CE  
(a)  
12  
Ic=-10A, V =-2V  
CE  
(a)  
Collector-emitter saturation  
voltage  
V
-11  
-40  
-20  
-60  
mV  
mV  
mV  
mV  
CE(sat)  
I =-100mA, I =-10mA  
C
B
(a)  
I =-1A, I =-100mA  
C
B
(a)  
-150 -230  
-150 -200  
I =-2A, I =-40mA  
C
B
(a)  
I =-5A, I =-500mA  
C
B
(a)  
Base-emitter saturation  
voltage  
V
V
-0.81 -0.88  
-0.95 -1.05  
V
V
BE(sat)  
BE(on)  
I =-2A, I =-40mA  
C B  
(a)  
I =-5A, I =-500mA  
C
B
(a)  
Base-emitter turn-on voltage  
Transition frequency  
-0.82 -0.92  
190  
V
I =-5A, V =-2V  
C
CE  
f
MHz Ic=-500mA, V =-10V,  
T
CE  
f=50MHz  
Output capacitance  
Delay time  
C
42  
14  
pF  
ns  
ns  
ns  
ns  
V
=-10V, f=1MHz  
obo  
CB  
t
t
t
t
(d)  
Rise time  
23  
V
=-12V, I =-2.5A,  
C
(r)  
CC  
Storage time  
Fall time  
240  
30  
I =I =-125mA  
B1 B2  
(stg)  
(f)  
NOTES:  
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%.  
Issue 3 - January 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTP2025F  
Typical characteristics  
Issue 3 - January 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTP2025F  
Packaging details - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.013  
0.0004  
0.083  
0.018  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.33  
0.01  
2.10  
0.45  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 3 - January 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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