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ZXTP25040DZTA

型号:

ZXTP25040DZTA

描述:

在SOT89 40V PNP中功率晶体管[ 40V PNP medium power transistor in SOT89 ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

8 页

PDF大小:

380 K

ZXTP25040DZ  
40V PNP medium power transistor in SOT89  
Summary  
BV  
BV  
> -40V  
CEO  
ECO  
> -3V  
I
= -3.5A  
C(cont)  
R
= 55m  
< -90mV @ 1A  
CE(sat)  
V
CE(sat)  
P = 2.4W  
D
Complementary part number ZXTN25040DZ  
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
High power dissipation SOT89 package  
High peak current  
Low saturation voltage  
3V reverse blocking voltage  
Applications  
E
C
B
MOSFET and IGBT gate driving  
DC - DC converters  
Motor drive  
C
High side driver  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXTP25040DZTA  
Device marking  
7
12  
1000  
1L6  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXTP25040DZ  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base voltage  
V
V
V
V
-45  
V
CBO  
CEO  
ECO  
EBO  
Collector-Emitter voltage (forward blocking)  
Emitter-Collector voltage (reverse blocking)  
Emitter-Base voltage  
-40  
-3  
V
V
V
A
A
A
-7  
(c)  
I
-3  
Continuous Collector current  
C
Base current  
I
-1  
B
Peak pulse current  
I
-9  
CM  
(a)  
P
P
P
P
P
1.1  
8.8  
W
Power dissipation at T =25°C  
D
D
D
D
D
A
mW/°C  
Linear derating factor  
(b)  
1.8  
W
Power dissipation at T =25°C  
A
14.4  
mW/°C  
Linear derating factor  
(c)  
2.4  
W
Power dissipation at T =25°C  
A
19.2  
mW/°C  
Linear derating factor  
(d)  
4.46  
35.7  
W
Power dissipation at T =25°C  
A
mW/°C  
Linear derating factor  
(e)  
15.7  
126  
W
Power dissipation at T =25°C  
C
mW/°C  
Linear derating factor  
Operating and storage temperature range  
T , T  
-55 to 150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
117  
°C/W  
Junction to ambient  
JA  
(b)  
R
68  
51  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to ambient  
JA  
(c)  
R
Junction to ambient  
JA  
(d)  
R
28  
Junction to ambient  
JA  
(e)  
R
7.95  
Junction to case  
JC  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(d)As (c) above measured at t<5 seconds.  
(e) Junction to case (collector tab). Typical  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXTP25040DZ  
Thermal characteristics  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXTP25040DZ  
Thermal characteristics  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXTP25040DZ  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min.  
Typ.  
Max. Unit Conditions  
Collector-Base breakdown BV  
voltage  
-45  
-40  
-75  
V
I = -100μA  
C
CBO  
CEO  
(*)  
Collector-Emitter  
breakdown voltage  
(base open)  
Emitter-Collector  
breakdown voltage  
(reverse blocking)  
BV  
BV  
BV  
-65  
V
I = -10mA  
C
-3  
-7  
-8.7  
V
V
I = -100μA  
E
ECO  
EBO  
Emitter-Base breakdown  
voltage  
-8.2  
<-1  
I = -100μA  
E
Collector cut-off current  
I
-50  
nA  
V
= -45V  
CBO  
CB  
V
= -45V, T =100°C  
-0.5  
μA  
CB  
amb  
Emitter cut-off current  
I
<-1  
-50  
nA  
V
= -5.6V  
EB  
EBO  
IC = -1A, IB = -20mA(*)  
IC = -1A, IB = -100mA(*)  
IC = -3.5A, IB = -350mA(*)  
Collector-Emitter  
saturation voltage  
V
-170  
-70  
-215  
-265  
-90  
-350  
mV  
mV  
mV  
CE(sat)  
IC = -3.5A, IB = -350mA(*)  
Base-Emitter saturation  
voltage  
Base-emitter turn-on  
voltage  
Static forward current  
transfer ratio  
V
V
h
-970 -1050  
mV  
BE(sat)  
BE(on)  
(*)  
-870  
-950  
900  
mV  
I = -3.5A, V = -2V  
C
CE  
(*)  
300  
200  
20  
450  
300  
50  
I = -10mA, V = -2V  
FE  
C
CE  
(*)  
I = -1A, V = -2V  
C
CE  
(*)  
I = -3.5A, V = -2V  
C
CE  
Transition frequency  
f
270  
MHz I = -50mA, V = -10V  
T
C
CE  
f = 100MHz  
(*)  
Input capacitance  
C
C
142  
pF  
pF  
V
= -0.5V, f = 1MHz  
ibo  
EB  
(*)  
Output capacitance  
17.4  
V
V
= -10V, f = 1MHz  
obo  
CB  
Turn-on time  
Turn-off time  
t
t
75.5  
320  
ns  
ns  
= -15V, I = -750mA,  
C
(on)  
(off)  
CC  
IB1  
=
-IB2  
=
-15mA,  
NOTES:  
(*) Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXTP25040DZ  
Typical characteristics  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXTP25040DZ  
Package outline - SOT89  
D
A
C
D1  
E
E1  
H
L
B
e
B1  
e1  
DIM  
Millimeters  
Inches  
Min Max  
DIM  
Millimeters  
Inches  
Min  
Max  
1.60  
0.56  
0.48  
0.44  
4.60  
1.83  
Min  
Max  
2.60  
2.29  
Min  
Max  
0.102  
0.090  
A
B
1.40  
0.44  
0.36  
0.35  
4.40  
1.52  
0.550  
0.017  
0.014  
0.014  
0.173  
0.064  
0.630  
0.022  
0.019  
0.017  
0.181  
0.072  
E
E1  
e
2.29  
2.13  
0.090  
0.084  
B1  
C
1.50 BSC  
3.00 BSC  
0.059 BSC  
0.118 BSC  
e1  
H
D
3.94  
0.89  
4.25  
1.20  
0.155  
0.035  
0.167  
0.047  
D1  
L
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 1 - December 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXTP25040DZ  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 1- December 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
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