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ZXTP26020DMFTA

型号:

ZXTP26020DMFTA

描述:

20V低VCE ( SAT) PNP表层嵌晶体管[ 20V LOW VCE(SAT ) PNP SURFACE MOUNTED TRANSISTOR ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

6 页

PDF大小:

112 K

A Product Line of  
Diodes Incorporated  
ZXTP26020DMF  
20V LOW VCE(SAT) PNP SURFACE MOUNTED TRANSISTOR  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: DFN1411-3  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – NiPdAu over Copper lead frame. Solderable  
per MIL-STD-202, Method 208  
Complementary NPN Type Available (ZXTN26020DMF)  
Low Collector-Emitter Saturation Voltage, VCE(SAT)  
High Current Gain (hFE) at High IC  
Surface Mount Package Suited for Automated Assembly  
Ultra-Small Surface Mount Package  
Qualified to AEC-Q101 Standards for High Reliability  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)  
“Green” Device (Note 2)  
Weight: 0.003 grams (approximate)  
ESD rating: 400V-MM, 8KV-HBM  
Applications  
MOSFET and IGBT gate driving  
DC-DC conversion  
Interface between low voltage IC and Load  
Load disconnect switch  
E
C
B
Top view  
Bottom view  
Device Symbol  
Pin-Out Top view  
Ordering Information  
Product  
ZXTP26020DMFTA  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
3000  
7
8
Notes:  
1. No purposefully added lead. Halogen and Antimony Free.  
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com  
Marking Information  
Z2= Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: W = 2009)  
Z2  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
2016  
Code  
W
X
Y
Z
A
B
C
D
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
ZXTP26020DMF  
Document number: DS32101 Rev. 1 - 2  
1 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP26020DMF  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-20  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
-20  
V
-7  
V
-1.25  
-4  
A
A
ICM  
Base Current(DC)  
-0.3  
-0.6  
A
IB  
Peak Base Current  
A
IBM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
1
Unit  
W
Power Dissipation (Note 3)  
Power Dissipation (Note 4)  
380  
125  
mW  
PD  
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C  
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C  
Operating and Storage Temperature Range  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
JA  
330  
JA  
-55 to +150  
T
J, TSTG  
Notes:  
3. Device mounted on FR-4 PCB with 1inch square pads.  
4. Device mounted on FR-4 PCB with minimum recommended pad layout  
ZXTP26020DMF  
Document number: DS32101 Rev. 1 - 2  
2 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP26020DMF  
Electrical Characteristics (at TA = 25°C unless otherwise specified)  
Characteristic  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Min  
-20  
-20  
-7  
Typ  
Max  
-100  
-0.5  
Unit  
V
Test Condition  
IC = -100μA, IE = 0A  
IC = -10mA, IB = 0A  
IE = -100μA, IC = 0A  
VCB = -20V, IE = 0A  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 5)  
Emitter-Base Breakdown Voltage  
V
V
nA  
μA  
nA  
nA  
Collector Cutoff Current  
Icbo  
V
V
V
CB = -20V, IE = 0A,TA = 125°C  
CE = -20V, VBE = 0V  
Emitter Cutoff Current  
Base Cutoff Current  
Ices  
Iebo  
-100  
-50  
BE = -6V, IC = 0A  
VCE = -2V, IC = -100mA  
VCE = -2V, IC = -0.5A  
300  
235  
175  
140  
DC Current Gain (Note 5)  
hFE  
V
CE = -2V, IC = -1A  
VCE = -2V, IC = -1.5A  
IC = -100mA, IB = -1mA  
-80  
mV  
mV  
mV  
mV  
I
C = -500mA, IB = -50mA  
IC = -1A, IB = -50mA  
C = -1.25A, IB = -62.5mA  
-100  
-155  
-235  
Collector-Emitter Saturation Voltage (Note 5)  
VCE(SAT)  
I
Equivalent On-Resistance  
125  
m  
V
RCE(SAT)  
VBE(ON)  
VBE(SAT)  
Cobo  
-1.1  
-1.15  
20  
IC = -1A, IB = -50mA  
VCE = -5V, IC = -1A  
Base-Emitter Turn-On Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance (Note 5)  
V
I
C = -1A, IB = -50mA  
VCB = -10V, f = 1.0MHz  
CE = -10V, IC = -50mA,  
f = 100MHz  
pF  
V
Current Gain-Bandwidth Product  
200  
MHz  
fT  
Turn-On Time  
Delay Time  
Rise Time  
60  
20  
ns  
ns  
ns  
ns  
ns  
ns  
ton  
td  
tr  
40  
V
CC = -10V, IC = -1A  
Turn-Off Time  
Storage Time  
Fall Time  
167  
140  
27  
IB2 = -IB1 = -50mA  
toff  
ts  
tf  
Notes:  
5. Short duration pulse test used to minimize self-heating effect.  
ZXTP26020DMF  
Document number: DS32101 Rev. 1 - 2  
3 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP26020DMF  
1,000  
800  
1
I
/I = 10  
B
C
T
= 150°C  
= 85°C  
A
V
= -2V  
CE  
0.1  
T
A
T
= 150°C  
A
600  
400  
T
= 85°C  
A
T
= 25°C  
A
T
= 25°C  
A
T
= -55°C  
A
0.01  
T
= -55°C  
A
200  
0
0.001  
0.1  
1
10  
100  
1,000  
10,000  
1
10  
100  
1,000  
10,000  
-IC, COLLECTOR CURRENT (mA)  
Fig. 2 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
-IC, COLLECTOR CURRENT (mA)  
Fig. 1 Typical DC Current Gain vs. Collector Current  
1.2  
1.0  
1.2  
1.0  
I
/I = 10  
B
C
V
= -5V  
CE  
0.8  
0.6  
0.4  
0.8  
T
T
= -55°C  
A
T
= -55°C  
A
A
0.6  
0.4  
= 25°C  
= 85°C  
A
T
= 25°C  
= 85°C  
T
A
T
A
T
= 150°C  
T
= 150°C  
0.2  
0
A
0.2  
0
A
1
10  
100  
1,000  
10,000  
0.1  
1
10  
100  
1,000  
10,000  
-IC, COLLECTOR CURRENT (mA)  
-IC, COLLECTOR CURRENT (mA)  
Fig. 3 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
Fig. 4 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
1,000  
100  
f = 1MHz  
C
ibo  
C
obo  
10  
1
0.1  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 5 Typical Capacitance Characteristics  
ZXTP26020DMF  
Document number: DS32101 Rev. 1 - 2  
4 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP26020DMF  
Package Outline Dimensions  
DFN1411-3  
Dim Min Max Typ  
A
A
A1  
b
0.47 0.53 0.50  
0.05 0.02  
0.25 0.35 0.30  
1.35 1.475 1.40  
A1  
0
D
D
D2 0.65 0.85 0.75  
1.05 1.18 1.10  
E2 0.65 0.85 0.75  
E
b
e
L
L1  
0.55  
0.225 0.325 0.275  
0.20  
E
E2  
e
All Dimensions in mm  
D2  
L1  
L
Suggested Pad Layout  
Dimensions  
Value (in mm)  
1.38  
C
Z
G1  
G2  
X
X1  
X2  
Y
0.15  
0.15  
0.95  
0.75  
0.40  
0.75  
X2  
X1  
X
G2  
C
0.76  
Y
G1  
Z
ZXTP26020DMF  
Document number: DS32101 Rev. 1 - 2  
5 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP26020DMF  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2010, Diodes Incorporated  
www.diodes.com  
ZXTP26020DMF  
Document number: DS32101 Rev. 1 - 2  
6 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
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