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ZXTPS720MCTA

型号:

ZXTPS720MCTA

描述:

40V PNP低饱和晶体管和[ 40V PNP LOW SATURATION TRANSISTOR AND ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

10 页

PDF大小:

262 K

A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
40V PNP LOW SATURATION TRANSISTOR AND  
40V, 1A SCHOTTKY DIODE COMBINATION DUAL  
Features  
Mechanical Data  
PNP Transistor  
Case: DFN3020B-8  
VCEO = -40V  
RSAT = 104m  
Terminals: Pre-Plated NiPdAu leadframe  
Nominal package height: 0.8mm  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Solderable per MIL-STD-202, Method 208  
Weight: 0.013 grams (approximate)  
I
C = -3A  
Schottky Diode  
VR = 40V  
VF = 500mv (@1A)  
I
C = 1A  
IC = -3A Continuous Collector Current  
Low Saturation Voltage (-220mV @ -1A)  
hFE characterized up to -3A  
Low VF, fast switching Schottky  
Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1)  
Applications  
DC – DC Converters  
Charging circuits  
Mobile phones  
Motor control  
“Green” Devices (Note 2)  
DFN3020B-8  
Device symbol  
Pin Configuration  
Top View  
Ordering Information  
Product  
ZXTPS720MCTA  
Status  
Active  
Package  
DFN3020B-8  
Marking  
3S1  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
7
8
3000  
Notes:  
1. No purposefully added lead. Halogen and Antimony Free.  
2. Diodes Inc’s “Green” Policy can be found on our website https://www.diodes.com  
Marking Information  
3S1 = Product type Marking Code  
Dot Denotes Pin 1  
1 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Maximum Ratings, Transistor  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Limit  
-50  
-40  
-7.5  
-4  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
A
Continuous Collector Current (Notes a and f)  
Base Current  
-3  
A
IC  
1
A
IB  
Thermal Characteristics, Transistor  
Characteristic  
Symbol  
Value  
1.5  
12  
Unit  
W
mW/°C  
W
mW/°C  
W
mW/°C  
W
mW/°C  
W
mW/°C  
W
Power Dissipation at TA = 25°C (Notes a and f)  
PD  
Linear Derating Factor  
2.45  
19.6  
Power Dissipation at TA = 25°C (Notes b and f)  
PD  
PD  
PD  
PD  
PD  
Linear Derating Factor  
1
8
Power Dissipation at TA = 25°C (Notes c and f)  
Linear Derating Factor  
1.13  
9
Power Dissipation at TA = 25°C (Notes d and f)  
Linear Derating Factor  
1.7  
13.6  
Power Dissipation at TA = 25°C (Notes d and g)  
Linear Derating Factor  
3
24  
Power Dissipation at TA = 25°C (Notes e and g)  
mW/°C  
Linear Derating Factor  
Junction to Ambient (Notes a and f)  
Junction to Ambient (Notes b and f)  
Junction to Ambient (Notes c and f)  
Junction to Ambient (Notes d and f)  
Junction to Ambient (Notes d and g)  
Junction to Ambient (Notes e and g)  
Junction Temperature  
83  
51  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
JA  
JA  
JA  
JA  
JA  
JA  
125  
111  
73.5  
41.7  
150  
TJ  
TSTG  
Storage Temperature Range  
-55 to +150  
°C  
Notes:  
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper  
area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.  
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The  
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The  
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
f. For a dual device with one active die.  
g. For dual device with 2 active die running at equal power.  
2 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Thermal Characteristics and Derating information, Transistor  
3 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Maximum Ratings, Schottky Diode  
Parameter  
Continuous Reverse Voltage  
Symbol  
VR  
Limit  
40  
Unit  
V
425  
1850  
3
mV  
mA  
A
Forward Voltage @ IF = 1000mA (typ)  
Forward Current  
VF  
IF  
Average Peak Forward Current D=50%  
IFAV  
Non Repetitive Forward Current t100µs  
t10ms  
12  
7
A
A
IFSM  
Thermal Characteristics, Schottky Diode  
Characteristic  
Symbol  
Value  
1.2  
12  
Unit  
W
mW/°C  
W
mW/°C  
W
mW/°C  
W
mW/°C  
W
mW/°C  
W
Power Dissipation at TA = 25°C (Notes a and f)  
PD  
Linear Derating Factor  
2
20  
Power Dissipation at TA = 25°C (Notes b and f)  
PD  
PD  
PD  
PD  
PD  
Linear Derating Factor  
0.8  
8
Power Dissipation at TA = 25°C (Notes c and f)  
Linear Derating Factor  
0.9  
9
Power Dissipation at TA = 25°C (Notes d and f)  
Linear Derating Factor  
1..36  
13.6  
Power Dissipation at TA = 25°C (Notes d and g)  
Linear Derating Factor  
2.4  
24  
Power Dissipation at TA = 25°C (Notes e and g)  
mW/°C  
Linear Derating Factor  
Junction to Ambient (Notes a and f)  
Junction to Ambient (Notes b and f)  
Junction to Ambient (Notes c and f)  
Junction to Ambient (Notes d and f)  
Junction to Ambient (Notes d and g)  
Junction to Ambient (Notes e and g)  
Junction Temperature  
83  
51  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
JA  
JA  
JA  
JA  
JA  
JA  
125  
111  
73.5  
41.7  
125  
TJ  
TSTG  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Notes:  
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper  
area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.  
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The  
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The  
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
f. For a dual device with one active die.  
g. For dual device with 2 active die running at equal power.  
4 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Thermal Characteristics and Derating information, Schottky Diode  
5 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Electrical Characteristics, Transistor @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 3)  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
-50  
-40  
-7.5  
-
Typ  
-80  
-70  
-8.5  
-
Max  
-
Unit  
V
Test Condition  
IC = -100µA  
-
V
IC = -10mA  
IE = -100µA  
VCB = -40V  
VEB = -6V  
VCES = -32V  
-
V
-25  
-25  
-25  
nA  
nA  
nA  
Emitter Cutoff Current  
-
-
IEBO  
Collector Emitter Cutoff Current  
-
-
ICES  
I
C = -10mA, VCE = -2V  
IC = -100mA, VCE = -2V  
C = -1A, VCE = -2V  
IC = -1.5A, VCE = -2V  
300  
300  
180  
60  
480  
450  
290  
130  
22  
-
-
-
-
-
Static Forward Current Transfer Ratio  
(Note 3)  
-
hFE  
I
12  
I
I
C = -3A, VCE = -2V  
C = -0.1A, IB = -10mA  
-
-
-
-
-
-25  
-40  
IC = -1A, IB = -50mA  
C = -1.5A, IB = -100mA  
IC = -2A, IB = -200mA  
C = -2.5A, IB = -250mA  
-150  
-195  
-210  
-260  
-220  
-300  
-300  
-370  
Collector-Emitter Saturation Voltage  
(Note 3)  
mV  
VCE(sat)  
I
I
Base-Emitter Turn-On Voltage (Note 3)  
Base-Emitter Saturation Voltage (Note 3)  
Output Capacitance  
-
-
-
-0.89  
-0.97  
19  
-0.95  
-1.05  
25  
V
V
VBE(on)  
VBE(sat)  
Cobo  
IC = -2.5A, VCE = -2V  
IC = -2.5A, IB = -250mA  
VCB = -10V, f = 1MHz  
pF  
V
CE = -10V, IC = -50mA,  
Transition Frequency  
150  
190  
-
MHz  
fT  
f = 100MHz  
Turn-on Time  
Turn-off Time  
-
-
40  
-
-
ns  
ns  
ton  
toff  
V
CC = -15V, IC = -0.75A  
435  
IB1 = IB2 = -15mA  
Electrical Characteristics, Schottky Diode @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage  
40  
60  
-
V
V(BR)R  
IR = -300µA  
IF = 50mA  
IF = 100mA  
IF = 250mA  
IF = 500mA  
IF = 750mA  
IF = 1000mA  
IF = 1500mA  
IF = 1000mA, TA = 100°C  
VR = 30V  
-
-
-
-
-
-
-
-
240  
265  
305  
355  
390  
425  
495  
420  
270  
290  
340  
400  
450  
500  
600  
-
Forward Voltage (Note 3)  
mV  
VF  
Reverse Current  
-
-
50  
25  
100  
-
µA  
pF  
IR  
Diode Capacitance  
CD  
VR = 25V, f = 1MHz  
switched from  
IF = 500mA to IR = 500mA  
Measured at IR = 50mA  
Reverse Recovery Time  
-
12  
-
ns  
trr  
Notes:  
3 . Measured under pulsed conditions.  
6 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Typical Characteristics, Transistor  
7 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Typical Characteristics, Schottky Diode  
8 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
Package Outline Dimensions  
DFN3020B-8  
Dim Min Max Typ  
A
A3  
A
A1  
A3  
b
0.77 0.83 0.80  
A1  
0
-
0.05 0.02  
0.15  
-
D
0.25 0.35 0.30  
2.95 3.075 3.00  
D
D2 0.82 1.02 0.92  
D4 1.01 1.21 1.11  
D4  
D4  
e
-
-
0.65  
E
1.95 2.075 2.00  
D2  
E
E2 0.43 0.63 0.53  
L
Z
E2  
e
0.25 0.35 0.30  
0.375  
b
Z
-
-
All Dimensions in mm  
L
Suggested Pad Layout  
C
X
Dimensions  
Value (in mm)  
0.650  
Y1  
Y
C
G
G1  
X
X1  
Y
G1  
0.285  
0.090  
0.400  
1.120  
G
Y2  
0.730  
X1  
Y1  
Y2  
0.500  
0.365  
9 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTPS720MC  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR  
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising  
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under  
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such  
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are  
represented on Diodes Incorporated website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales  
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising  
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and  
markings noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the  
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in  
the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,  
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their  
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-  
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes  
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life  
support devices or systems.  
Copyright © 2009, Diodes Incorporated  
www.diodes.com  
10 of 10  
www.diodes.com  
January 2010  
© Diodes Incorporated  
ZXTPS720MC  
Document Number DS31938 Rev. 2 - 2  
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