IXFH 12N100F
IXFT 12N100F
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
TO-247 AD Outline
min. typ. max.
V
= 10 V; I = 0.5 I
D25
Note 1
8
12
S
DS
D
Ciss
Coss
Crss
2700
305
93
pF
pF
pF
1
2
3
Terminals:
1 - Gate
V
= 0 V, V = 25 V, f = 1 MHz
GS
DS
2 - Drain
3 - Source
Tab - Drain
td(on)
tr
td(off)
tf
12
9.8
31
ns
ns
ns
ns
V
= 10 V, V = 0.5 V , I = 0.5 I
D25
GS
DS
DSS
D
R = 2.0 Ω (External)
G
12
Dim.
A
Millimeter
Inches
Min. Max.
Min.
Max.
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
77
16
42
nC
nC
nC
A
1
V
= 10 V, V = 0.5 V , I = 0.5 I
DS DSS D D25
A
GS
2
b
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Qgd
b
1
b
2
RthJC
RthCK
0.42 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
(TO-247)
0.25
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
L
L1
Source-DrainDiode
Characteristic Values
(T = 25°C, unless otherwise specified)
P
3.55
5.89
3.65 .140 .144
6.40 0.232 0.252
Q
J
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Symbol
TestConditions
= 0 V
min. typ. max.
IS
V
12
48
A
A
GS
TO-268 Outline
ISM
Repetitive;
pulse width limited by T
JM
VSD
I = I , V = 0 V, Note 1
1.5
V
F
S
GS
trr
250 ns
I = I ,-di/dt = 100 A/µs, V = 100 V
QRM
IRM
0.8
7
µC
F
S
R
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
Min Recommended Footprint
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
