1SS5004WS
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
Features
• Fast switching speed
• High conductance
2
1
YM
• High reverse breakdown voltage rating
Top View
Marking Code: "YM"
Simplified outline SOD-323 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
Reverse Voltage
VRRM
VR
400
V
V
350
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current (1 ms)
Power Dissipation
IF
225
mA
mA
A
IFRM
IFSM
Pd
625
2
350
mW
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Ts
- 65 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 20 mA
at IF = 100 mA
at IF = 200 mA
-
-
-
0.87
1
1.25
VF
V
Reverse Current
at VR = 240 V
IR
V(BR)R
CT
-
100
-
nA
V
Reverse Breakdown Voltage
at IR = 150 µA
400
Total Capacitance
at VR = 0 , f = 1 MHz
-
-
5
pF
ns
Reverse Recovery Time
at IF = IR = 30 mA , irr = 3 mA, RL = 100 Ω
trr
100
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2008
