TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
High Speed Switching Diode
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
TSTG
TJ
Power Dissipation
200
-65 to +150
+150
80
mW
°C
Storage Temperature Range
Operating Junction Temperature
Reverse Voltage
°C
VR
V
VRM
IFM
Repetitive Peak Reverse Voltage
Forward Current
90
V
250
mA
mA
mA
IO
Continuous Forward Current
Repetitive Peak Forward Current
150
IFRM
500
Peak Forward Surge Current
(Pulse Width=1us)
IFSM
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
High Speed Switching Device (TRR <4.0 nS)
General Purpose Diodes
DEVICE MARKING CODE:
Device
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Device Type
1SS355
Marking
S4
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
Electrical Characteristics
TA = 25°C unless otherwise noted
Limits
Symbol
Parameter
Test Condition
IR=100µA
Unit
Min
Max
BV
IR
Breakdown Voltage
80
Volts
nA
Reverse Leakage Current
Forward Voltage
VR=80V
100
1.2
VF
TRR
IF=100mA
IF=10mA
Volts
Reverse Recovery Time
VR=6V
4
4
nS
pF
RL=100Ω
VR=0.5V, f=1MHZ
C
Capacitance
Number: DB-010
July 2011 Release, Revision F
Page 1
