SMD Type
Diodes
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE
1SS304
Features
Low capacitance: Ct = 1.1 pF TYP.
High speed switching: trr = 3.0 ns MAX.
Wide applications including switching, limitter, clipper.
Double diode configuration assures economical use.
Absolute M axim um R atings T a = 25
P aram eter
P eak R everse V oltage
S ym bol
V R M
V R
R ating
75
U nit
V
D C R everse V oltage
50
V
S urge C urrent (1 µs) N ote 1
S urge C urrent (1 µs)
IFSM
IFSM
IFM
6.0
A
4.0
A
P eak Forward C urrent N ote 1
P eak Forward C urrent
450
m A
m A
m A
m A
IFM
300
A verage R ectified C urrent (N ote 1)
A verage R ectified C urrent
Junction Tem perature
IO
150
IO
100
Tj
150
S torage Tem perature R ange
Junction to A m bient (N ote 1)
Junction to A m bient
Tstg
-55 to +150
1.0
R th( j-a )
R th( j-a )
m W
m W
0.85
N ote
1.B oth diodes loaded sim ultaneously.
Electrical Characteristics Ta = 25
Parameter
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
Ct
Test Conditions
IF = 10 mA
Min
Typ
0.67
0.75
0.85
Max
1.0
1.1
1.2
0.1
4.0
3.0
Unit
V
Forward voltage
IF = 50 mA
IF = 100 mA
VR = 50 V
Reverse current
Capacitance
A
pF
ns
VR = 0, f = 1.0 MHz
1.1
Reverse recovery time
trr
Marking
Marking
A6
1
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