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NX8350TS

型号:

NX8350TS

描述:

激光二极管1 271 〜1 331 nm的AlGaInAs MQW - DFB激光二极管,用于40 G碱基- LR4应用[ LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION ]

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

9 页

PDF大小:

221 K

Preliminary Data Sheet  
NX8350TS  
LASER DIODE  
R08DS0025EJ0100  
Rev.1.00  
Sep 19, 2010  
1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION  
DESCRIPTION  
The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser  
diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package  
designed for CFP transceiver.  
FEATURES  
Internal optical isolator  
Peak emission wavelength  
Optical output power  
1 271/1 291/1 311/1 331 nm  
Pf = 2 dBm  
Ith = 8 mA TYP. @ TC = 25°C  
TC = 5 to +85°C  
Low threshold current  
Wide operating temperature range  
InGaAs monitor PIN-PD  
IEEE802.3ba compliant  
APPLICATIONS  
40 G BASE-LR4  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 1 of 7  
NX8350TS  
Chapter Title  
PACKAGE DIMENSIONS (UNIT: mm)  
TOP VIEW  
non XMD-MSA  
PD Cathod  
Signal GND  
LD Cathod  
LD Anode  
Signal GND  
NC  
5±±0±5  
305±±0±ꢀ  
ꢀ099±±0±ꢁ  
ꢀ09ꢀ±±0±ꢁ  
OPTICAL  
REFERENCE  
PLANE  
305±±0±5  
50ꢀ±±0±ꢀ  
506±±0±5  
BOTTOM VIEW  
ꢁ045  
±044  
R±05  
ꢁ06  
ꢁ0.9  
ꢀ0ꢀ9  
ꢀ0.9  
30..  
ꢁ±0±4  
ꢁ4069  
Remarks1. Receptacle is electrically isolated from CAN0  
2. Characteristic impedance of flexible printed circuit is ꢀ5 Ω0  
3. NX835±TS has no matching resistor installed0  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 2 of 7  
NX8350TS  
Chapter Title  
ORDERING INFORMATION  
Part Number  
Receptacle Type  
Note  
NX8350TSxx LC, Electrically isolated  
Differential input with short length flexible PCB, without matching  
resistor. xx is wavelength code.  
“27” means 1 271 nm.  
“29” means 1 291 nm.  
“31” means 1 311 nm.  
“33” means 1 331 nm.  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 3 of 7  
NX8350TS  
Chapter Title  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Storage Temperature  
Operating Case Temperature  
Forward Current of LD  
Reverse Voltage of LD  
Forward Current of PD  
Reverse Voltage of PD  
Symbol  
Tstg  
Ratings  
Unit  
°C  
°C  
mA  
V
40 to +95  
5 to +85  
TC  
IFLD  
150  
VRLD  
IFPD  
2
10  
15  
mA  
V
VRPD  
Tsld  
Soldering Temperature  
(Flexible Printed Circuit)  
260 (10 sec.)  
°C  
Optical Output Power  
Pf  
10  
mW  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 4 of 7  
NX8350TS  
Chapter Title  
ELECTRO-OPTICAL CHARACTERISTICS  
(TC = 5 to +85°C, BOL, unless otherwise specified)  
Parameter  
Symbol  
Conditions  
CW, Pf = 2 dBm  
MIN.  
TYP.  
MAX.  
Unit  
dBm  
nm  
Mean Optical Output Power  
Peak Emission Wavelength  
Pf  
2
λp  
1 264.5  
1 284.5  
1 304.5  
1 324.5  
30  
1 277.5  
1 297.5  
1 317.5  
1 337.5  
Side Mode Suppression Ratio  
Operating Current  
SMSR  
Iop  
CW, Pf = 2 dBm  
Pf = 2 dBm  
dB  
mA  
mA  
70  
15  
Threshold Current  
Ith  
CW, TC = 25°C  
8
CW  
2
30  
Differential Efficiency  
ηd  
CW, Pf = 2 dBm, TC = 25°C  
CW, Pf = 2 dBm  
CW, Pf = 2 dBm  
CW, Pf = 2 dBm  
VR = 3.3 V, TC = 25°C  
VR = 3.3 V, TC = 85°C  
VR = 3.3 V, f = 1 MHz  
0.055  
0.03  
0.069  
0.085  
0.1  
2.0  
500  
10  
W/A  
Operation Voltage  
Monitor Current  
Vop  
Im  
V
50  
μA  
nA  
Monitor Dark Current  
ID  
100  
20  
Monitor PD Terminal  
Capacitance  
Ct  
pF  
Rise Time  
tr  
tf  
20-80%  
*1  
*1  
35  
42  
50  
50  
ps  
ps  
Fall Time  
20-80%  
Relative Intensity Noise  
Tracking Error  
Note: *1. 10.3125 Gb/s, PRBS 2311, NRZ, Duty Cycle = 50%, Renesas Electronics Setup.  
RIN  
γ
BR = 20 dB, IEEE802.3ba  
128  
1.0  
dB/Hz  
dB  
1.0  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 5 of 7  
NX8350TS  
Chapter Title  
REFERENCE  
Document Name  
Document No.  
Opto-Electronics Devices Pamphlet*1  
PX10160E  
Note: *1. Published by the former NEC Electronics Corporation.  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 6 of 7  
NX8350TS  
Chapter Title  
SAFETY INFORMATION ON THIS PRODUCT  
SEMICONDUCTOR LASER  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
AVOID EXPOSURE-Invisible  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
Laser Radiation is emitted from  
this aperture  
CLASS lllb LASER PRODUCT  
A laser beam is emitted from this diode during operation0  
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of  
eyesight0  
Warning Laser Beam  
• Do not look directly into the laser beam0  
• Avoid exposure to the laser beam, any reflected or collimated beam0  
This product uses gallium arsenide (GaAs)0  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe  
the following points0  
Caution GaAs Products  
• Follow related laws and ordinances when disposing of the product0 If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below0  
ꢁ0 Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials0  
ꢀ0 Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal0  
• Do not burn, destroy, cut, crush, or chemically dissolve the product0  
• Do not lick the product or in any way allow it to enter the mouth0  
A glass-fiber is attached on the product0 Handle with care0  
Caution Optical Fiber  
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part  
or fragments0  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 7 of 7  
Revision History  
NX8350TS Data Sheet  
Description  
Summary  
Rev.  
1.00  
Date  
Page  
Sep 19, 2010  
First edition issued  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  
Notice  
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas  
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to  
be disclosed by Renesas Electronics such as that disclosed through our website.  
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or  
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or  
others.  
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the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the  
use of these circuits, software, or information.  
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The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.  
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8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage  
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the  
use of Renesas Electronics products beyond such specified ranges.  
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no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.  
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.  
(Note 2)  
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.  
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http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
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Colophon 1.0  
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