请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZT956

型号：

FZT956

描述：

PNP硅平面高电流（高性能）晶体管[ PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

5 页

PDF大小：

117 K

下载PDF手册
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
ISSUE 2 – OCTOBER 1995  
FZT955  
FZT956  
FEATURES  
*
*
*
4 Amps continuous current (10 Amps peak current)  
Very low saturation voltages  
C
Excellent gain characteristics specified up to 3 Amps  
E
PARTMARKING DETAILS –  
DEVICE TYPE IN FULL  
C
COMPLEMENTARY TYPES – FZT955 - FZT855  
FZT956 - N/A  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
FZT955  
-180  
FZT956  
-220  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
VCBO  
VCEO  
VEBO  
ICM  
-140  
-200  
V
-6  
V
-10  
-4  
-5  
-2  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 284  
FZT955  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-180  
-180  
-140  
-6  
-210  
-210  
-170  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
IC=-1µA, RB ≤1kΩ  
IC=-10mA*  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base Breakdown  
Voltage  
IE=-100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
µA  
VCB=-150V  
VCB=-150V,Tamb=100°C  
ICER  
R ≤1kΩ  
-50  
-1  
nA  
µA  
VCB=-150V  
VCB=-150V,Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation VCE(sat)  
Voltage  
-30  
-70  
-110  
-275  
-60  
mV IC=-100mA, IB=-5mA*  
mV IC=-500mA,IB=-50mA*  
mV IC=-1A, IB=-100mA*  
mV IC=-3A, IB=-300mA*  
-120  
-150  
-370  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-970  
-830  
-1110 mV IC=-3A, IB=-300mA*  
Base-Emitter  
Turn-On Voltage  
-950  
300  
mV I =-3A, VCE=-5V*  
Static Forward  
Current Transfer Ratio  
100  
100  
75  
200  
200  
140  
10  
IC=-10mA, VCE=-5V*  
IC=-1A, VCE=-5V*  
IC=-3A, VCE=-5V*  
IC=-10A, VCE=-5V*  
Transition Frequency  
fT  
110  
40  
MHz IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
pF  
VCB=-20V, f=1MHz  
ton  
toff  
68  
1030  
ns  
ns  
IC=-1A, IB1=-100mA  
IB2=100mA, VCC=-50V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
Spice parameter data is available upon request for this device  
3 - 285  
FZT955  
TYPICAL CHARACTERISTICS  
I
C
/I  
B
=50  
-55°C  
+25°C  
+175°C  
Tamb=25°C  
IC/IB=10  
1.6  
1.4  
1.2  
1.6  
1.4  
1.2  
C B  
I /I  
=10  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
IC  
- Collector Current (Amps)  
IC  
- Collector Current (Amps)  
CE(sat)  
V
C
CE(sat)  
V
C
v I  
v I  
-55°C  
+25°C  
+100°C  
+175°C  
+100°C  
+25°C  
-55°C  
V
CE=5V  
C B  
I /I =10  
1.6  
1.4  
1.2  
1.0  
1.6  
1.4  
1.2  
300  
200  
100  
1.0  
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
0.2  
0
0.2  
0.001  
0.01  
0.1  
10 20  
1
0
0.001  
0.01  
0.1  
1
10 20  
IC  
- Collector Current (Amps)  
FE  
IC  
- Collector Current (Amps)  
BE(sat)  
C
C
v I  
h
v I  
V
Single Pulse Test at Tamb=25°C  
10  
1
-55°C  
+25°C  
+100°C  
+175°C  
VCE=5V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
D.C.  
1s  
100ms  
10ms  
1.0ms  
0.1ms  
0.1  
0
0.001  
0.01  
0.1  
1
10 20  
0.01  
1
10  
100  
1000  
I
C
- Collector Current (Amps)  
BE(on) v I  
VCE - Collector Voltage (Volts)  
V
C
Safe Operating Area  
3 - 286  
FZT956  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-220  
-220  
-200  
-6  
-300  
-300  
-240  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
IC=-1µA, RB ≤1kΩ  
IC=-10mA*  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base Breakdown  
Voltage  
IE=-100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
µA  
VCB=-200V  
VCB=-200V,Tamb=100°C  
ICER  
R ≤1kΩ  
-50  
-1  
nA  
µA  
VCB=-200V  
VCB=-200V,Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation VCE(sat)  
Voltage  
-30  
-120  
-168  
-50  
-165  
-275  
mV  
mV  
mV  
IC=-100mA,IB=-10mA*  
IC=-1A, IB=-100mA*  
IC=-2A, IB=-400mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-970  
-810  
-1110 mV  
IC=-2A, IB=-400mA  
IC=-2A, VCE=-5V*  
Base-Emitter  
Turn-On Voltage  
-950  
300  
mV  
Static Forward  
Current Transfer Ratio  
100  
100  
50  
200  
200  
150  
10  
IC=-10mA, VCE=-5V*  
IC=-1A, VCE=-5V*  
IC=-2A, VCE=-5V*  
IC=-5A, VCE=-5V*  
Transition Frequency  
fT  
110  
32  
MHz IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
pF  
VCB=-20V, f=1MHz  
IC=-1A, IB1=-100mA  
IB2=100mA, VCC=-50V  
ton  
toff  
67  
1140  
ns  
ns  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
Spice parameter data is available upon request for this device  
3 - 287  
FZT956  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I - Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
Single Pulse Test Tamb=25C  
10  
1
0.1  
µ
0.01  
1
100  
1000  
10  
I
- Collector Current (Amps)  
VCE - Collector Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
3 - 288  
厂商 型号 描述 页数 下载

ZETEX

 		FZT1047A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 4 页

KEXIN

 		FZT1047A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

DIODES

 		FZT1047A SOT223 NPN硅平面[ SOT223 NPN SILICON PLANAR ] 4 页

TYSEMI

 		FZT1047A 5安培连续电流20安培的脉冲电流。[ 5 Amp continuous current, 20 Amp pulse current. ] 2 页

DIODES

 		FZT1047ATA [ 暂无描述 ] 4 页

ZETEX

 		FZT1047ATA [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

 		FZT1047ATC [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

 		FZT1048 [ 暂无描述 ] 3 页

ZETEX

 		FZT1048A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 3 页

KEXIN

 		FZT1048A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.221273s