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FZT694B

型号:

FZT694B

描述:

NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

2 页

PDF大小:

101 K

SOT223 NPN SILICON PLANAR MEDIUM  
POWER HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FZT694B  
FEATURES  
*
*
High VCEO / Very Low Saturation Voltage  
Gain of 400 at IC=200mA  
C
APPLICATIONS  
*
*
Darlington replacement  
Relay / solenoid driver  
E
PARTMARKING DETAIL -  
FZT694B  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
Collector-Emitter Voltage  
120  
V
Emitter-Base Voltage  
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
1
2
A
Ptot  
W
°C  
Tj:Tstg  
= 25°C)  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
120  
5
V
IC=100µA  
IC=10mA*  
IE=100µA  
V
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
0.1  
0.1  
VCB=100V  
µA  
µA  
IEBO  
VEB=4V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.25  
0.5  
V
V
IC=100mA, IB=0.5mA*  
IC=400mA, IB=5mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
V
IC=1A, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
0.9  
V
IC=1A, VCE=2V*  
Static Forward  
Current Transfer  
Ratio  
500  
400  
150  
IC=100mA, VCE=2V*  
IC=200mA, VCE=2V*  
IC=400mA, VCE=2V*  
Transition Frequency  
fT  
130  
MHz  
IC=50mA, VCE=5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
200  
9
pF  
pF  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
Cobo  
ton  
toff  
80  
2900  
ns  
ns  
IC=100mA, IB!=10mA  
IB2=10mA, VCC=50V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 225  
FZT694B  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I - Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
10  
1
0.1  
0.01  
1
10  
100  
1000  
VCE - Collector Emitter Voltage (V)  
I
- Collector Current (Amps)  
VBE(on) v IC  
Safe Operating Area  
3 - 226  
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