SMD Type
Transistors
NPN Silicon Planar High Voltage Transistor
FZTA42
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
Suitable for video output stages in TV sets
and switch mode power supplies
High breakdown voltage
4
1 Base
2 Collector
3 Emitter
4 Collector
1
2
3
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IB
Rating
Unit
V
300
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
5
V
Base Current
100
500
mA
mA
W
Continuous Collector Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
IC
Ptot
2
Tj:Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Testconditons
IC=100ìA, IE=0
Min
300
300
5
Typ
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC=1mA, IB=0*
V
IE=100ìA, IC=0
V
VCB=200V, IE=0
VEB=5V, IC=0
0.1
0.1
0.5
0.9
ìA
ìA
V
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
V
25
40
40
50
Static Forward Current Transfer Ratio
hFE
Transition Frequency
Output Capacitance
fT
IC=10mA, VCE=20V,f=20MHz
VCB=20V, f=1MHz
MHz
pF
Cobo
6
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
1
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