SMD Type
Transistors
FZT949
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-50
-30
-50
Typ
-80
-45
-80
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
V
V
VCB=-40V
ICBO
-50
-1
nA
ìA
Collector Cut-Off Current
Emitter Cut-Off Current
VCB=-40V,Ta = 100
IEBO
VEB=-6V
-10
nA
IC=-0.5A, IB=-10mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
IC=-6A, IB=-250mA*
-50
-85
-75
-140
Collector-emitter saturation voltage *
VCE(sat)
V
-190 -270
-350 -440
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=-5.5A, IB=-500mA
VBE(on) IC=-5.5A, VCE=-1V
IC=-10mA, VCE =-1V
-1100 -1250
-900 -1060
200
V
V
100
100
75
IC=-1A, VCE =-1V*
hFE
IC=-5A, VCE =-1V*
200
140
35
300
Static Forward Current Transfer Ratio
IC=-20A, VCE =-2V*
Transitional frequency
Output capacitance
Turn-on time
fT
IC=-100mA, VCE=-10V, f=50MHz
100
122
120
130
MHz
pF
Cobo
t(on)
t(off)
VCB=-10V, f=1MHz
IC=-4A, VCC=-10V
IB1=IB2=-400mA
ns
Turn-off time
ns
* Pulse test: tp = 300 ìs; d
0.02.
2
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