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FZT869

型号:

FZT869

描述:

NPN硅平面高电流(高性能)晶体管[ NPN Silicon Planar High Current (High Performance) Transistor ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

2 页

PDF大小:

39 K

SMD Type  
Transistors  
NPN Silicon Planar High Current  
(High Performance) Transistor  
FZT869  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
-0.2  
6.50  
Features  
Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.  
7 Amp continuous collector current (20 Amp peak).  
Very low saturation voltages.  
+0.2  
0.90  
-0.2  
+0.1  
-0.1  
3.00  
+0.3  
7.00  
-0.3  
4
Excellent gain charateristics specified upto 20 Amp.  
Ptot = 3 Watts.  
1 base  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
2 collector  
3 emitter  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
25  
6
Collector-emitter voltage  
Emitter-base voltage  
Peak pulse current  
V
V
7
A
Continuous collector current  
Power dissipation  
ICM  
Ptot  
20  
3
A
W
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
1
www.kexin.com.cn  
SMD Type  
Transistors  
FZT869  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
60  
25  
6
Typ  
120  
35  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
V(BR)CBO IC=100ìA  
V(BR)CEO IC=10mA  
V(BR)EBO IE=100ìA  
V
8
V
VCB=50V  
ICBO  
50  
1
nA  
ìA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
VCB=50V,Ta = 100  
IEBO  
VEB=6V  
10  
nA  
35  
67  
50  
IC=0.5A, IB=10mA  
IC=1A, IB=10mA  
IC=2A, IB=10mA  
IC=6.5A, IB=150mA  
110  
215  
350  
Collector-emitter saturation voltage *  
VCE(sat)  
mV  
168  
Base-emitter saturation voltage *  
Base-Emitter Turn-On Voltage *  
VBE(sat) IC=6.5A, IB=300mA  
VBE(on) IC=6.5A, VCE=1V  
IC=10mA, VCE=1V  
1.2  
V
V
1.13  
300  
300  
200  
40  
450  
450  
300  
100  
IC=1A, VCE=1V  
hFE  
DC current gain *  
IC=7A, VCE=1V  
IC=20A, VCE=2V  
Transitional frequency  
Output capacitance  
Turn-on time  
fT  
IC=100mA, VCE=10V f=50MHz  
100  
70  
MHz  
pF  
Cobo  
t(on)  
t(off)  
VCB=10V, f=1MHz  
IC=1A, VCC=10V  
IB1=IB2=100mA  
60  
ns  
Turn-off time  
680  
ns  
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
FZT869  
2
www.kexin.com.cn  
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