SMD Type
Transistors
FZT853
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Symbol
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
Testconditons
Min
150
150
60
Typ
220
220
85
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=100ìA
V
IC=1ìA, RB 1KÙ
IC=10mA*
V
IE=100ìA
6
8
V
VCB=120V
50
1
nA
ìA
nA
ìA
nA
mV
mV
mV
mV
Collector Cut-Off Current
ICBO
VCB=120V,Tamb=100
VCB=120V
50
1
ICER
Collector Cut-Off Current R 1KÙ
Emitter Cut-Off Current
VCB=120V,Tamb=100
VEB=6V
IEBO
10
50
100
170
375
IC=0.1A, IB=50mA*
IC=1A, IB=50mA*
IC=2A, IB=50mA*
IC=6A, IB=300mA*
IC=6A, IB=300mA*
IC=6A, VCE=1V*
IC=10mA, VCE=1V
IC=2A, VCE=1V*
IC=5A, VCE=1V*
IC=10A, VCE=1V*
IC=100mA, VCE=10V,f=50MHz
VCB=10V, f=1MHz
IC=1A, IB1=100mA
IB2=100mA, VCC=10V
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
1200 mV
1150
300
V
100
100
75
200
200
120
50
Static Forward Current Transfer Ratio
hFE
25
Transition Frequency
Output Capacitance
fT
Cobo
ton
130
45
MHz
pF
45
ns
Switching Times
toff
1100
ns
*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
2
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