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FZT851

型号:

FZT851

描述:

NPN硅平面高电流(高性能)晶体管[ NPN Silicon Planar High Current (High Performance)Transistor ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

2 页

PDF大小:

39 K

SMD Type  
Transistors  
NPN Silicon Planar High Current  
(High Performance)Transistor  
FZT851  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.  
6 Amps continuous current, up to 20 Amps peak current.  
Very low saturation voltages.  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
Excellent hFE characteristics specified up to 10 Amps.  
1 base  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
2 collector  
3 emitter  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
150  
60  
Unit  
V
Collector-emitter voltage  
Emitter-base voltage  
Peak pulse current  
V
6
V
6
A
Continuous collector current  
Power dissipation  
ICM  
Ptot  
20  
3
A
W
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
1
www.kexin.com.cn  
SMD Type  
Transistors  
FZT851  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
150  
60  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
V(BR)CBO IC=100ìA  
V(BR)CEO IC=10mA  
V(BR)EBO IE=100ìA  
V
6
V
VCB=120V  
ICBO  
50  
1
nA  
ìA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
VCB=120V,Ta = 100  
IEBO  
VEB=6V  
10  
nA  
50  
IC=0.1A, IB=5mA  
IC=1A, IB=50mA  
IC=2A, IB=50mA  
IC=6A, IB=300mA  
100  
170  
375  
Collector-emitter saturation voltage *  
VCE(sat)  
mV  
Base-emitter saturation voltage *  
Base-Emitter Turn-On Voltage *  
VBE(sat) IC=6A, IB=300mA  
VBE(on) IC=6A, VCE=1V  
IC=10mA, VCE=1V  
1200 mV  
1150 mV  
100  
100  
75  
200  
200  
120  
50  
IC=2A, VCE=1V*  
hFE  
IC=5A, VCE=1V*  
300  
Static Forward Current Transfer Ratio*  
IC=10A, VCE=1V*  
25  
Transitional frequency  
Output capacitance  
Turn-on time  
fT  
IC=100mA, VCE=10V f=50MHz  
130  
45  
MHz  
pF  
Cobo  
t(on)  
t(off)  
VCB=10V, f=1MHz  
IC=1A, VCC=10V  
IB1=IB2=100mA  
45  
ns  
Turn-off time  
1100  
ns  
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
FZT851  
2
www.kexin.com.cn  
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