SMD Type
Transistors
NPN Silicon Planar Medium
Power High Gain Transistor
FZT688B
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
-0.2
6.50
Features
Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A.
Gain of 400 at IC=3 Amps and very low saturation voltage.
+0.2
0.90
-0.2
+0.1
-0.1
3.00
+0.3
7.00
-0.3
4
1 base
1
2
3
+0.1
0.70
-0.1
2.9
2 collector
3 emitter
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
12
12
5
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
V
V
4
A
Continuous collector current
Power dissipation
ICM
Ptot
10
2
A
W
Operating and storage temperature range
Tj,Tstg
-55 to +150
1
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