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FZT658

型号:

FZT658

描述:

NPN硅平面高压晶体管[ NPN Silicon Planar High Voltage Transistor ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

2 页

PDF大小:

38 K

SMD Type  
Transistors  
NPN Silicon Planar High Voltage Transistor  
FZT658  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
+0.2  
0.90  
-0.2  
400 Volt VCEO  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
Low saturation voltage  
4
1 Base  
2 Collector  
3 Emitter  
4 Collector  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
400  
Collector-Emitter Voltage  
400  
V
Emitter-Base Voltage  
5
V
Peak Pulse Current  
1
A
Continuous Collector Current  
Power Dissipation at Tamb=25  
Operating and Storage Temperature Range  
IC  
0.5  
2
A
Ptot  
W
Tj:Tstg  
-55 to +150  
1
www.kexin.com.cn  
SMD Type  
Transistors  
FZT658  
Electrical Characteristics Ta = 25  
Parameter  
Breakdown Voltage  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Testconditons  
Min Typ. Max  
Unit  
V
IC=100ìA  
IC=10mA*  
IE=100ìA  
VCB=320V  
VEB=4V  
400  
400  
5
Breakdown Voltage  
V
Breakdown Voltage  
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
100  
100  
0.3  
0.25  
0.5  
0.9  
1.0  
50  
nA  
nA  
V
IEBO  
IC=20mA, IB=1mA*  
Collector-Emitter Saturation Voltage  
VCE(sat)  
IC=50mA, IB=5mA*  
V
IC=100mA, IB=10mA  
IC=100mA, IB=10mA*  
IC=100mA, VCE=5V*  
IC=1mA, VCE=5V*  
V
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VBE(sat)  
VBE(on)  
V
V
Static Forward Current Transfer Ratio  
hFE  
IC=100mA, VCE=5V*  
IC=200mA, VCE=10V*  
IC=10mA, VCE=20V,f=20MHz  
VCB=20V, f=1MHz  
50  
40  
Transition Frequency  
Output Capacitance  
fT  
Cobo  
ton  
50  
MHz  
pF  
10  
IC=100mA, VCC=100V  
IB1=10mA, IB2=-20mA  
130  
3300  
ns  
Switching Times  
toff  
ns  
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%  
Marking  
Marking  
FZT658  
2
www.kexin.com.cn  
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