SMD Type
Transistors
NPN Silicon Planar Medium Power Transistor
FZT657
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
Low saturation voltage
4
1 Base
2 Collector
3 Emitter
4 Collector
1
2
3
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Rating
Unit
V
300
Collector-Emitter Voltage
300
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
IC
0.5
2
A
Ptot
W
Tj:Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Testconditons
Min Typ. Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC=100ìA
IC=10mA*
IE=100ìA
300
300
5
V
V
VCB=200V
0.1
0.1
0.5
1.0
1.0
40
ìA
ìA
V
Emitter Cut-Off Current
IEBO
VEB=3V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VCE(sat)
VBE(sat)
VBE(on)
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
IC=100mA, VCE =5V*
IC=10mA, VCE =5V*
IC=100mA, VCE =5V*
V
V
Static Forward Current Transfer Ratio
hFE
50
Transition Frequency
Output Capacitance
fT
IC=10mA, VCE =20V,f=20MHz
VCB =20V, f=1MHz
30
MHz
pF
Cobo
20
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT657
1
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