IXFC 15N80Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
ISOPLUS220 Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
8
16
S
Ciss
Coss
Crss
4300
360
60
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
18
27
53
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.5 Ω (External)
Qg(on)
Qgs
90
20
30
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.54 K/W
K/W
(TO-247)
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
15
60
A
ISM
Repetitive;
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
250
ns
µC
A
IF = IS-di/dt = 100 A/µs, VR = 100 V
0.85
8
IRM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
