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IXGH24N60AU1S

型号：

IXGH24N60AU1S

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

117 K

下载PDF手册
HiPerFASTTM  
IGBT with Diode  
Combi Pack  
VCES  
IC25  
VCE(sat)  
tfi  
= 600 V  
48 A  
= 2.7 V  
= 275 ns  
IXGH 24N60AU1  
IXGH 24N60AU1S  
=
TO-247 SMD  
(24N60AU1S)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
(24N60AU1)  
IC25  
IC90  
ICM  
TC = 25°C  
48  
24  
96  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
C (TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 100 µH  
ICM = 48  
@ 0.8 VCES  
A
G
C
E
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
l
-55 ... +150  
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
IGBT and anti-parallel FRED in one  
package  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
2nd generation HDMOSTM process  
Low VCE(sat)  
l
l
Weight  
TO-247 SMD  
TO-247 AD  
4
6
g
g
- for minimum on-state conduction  
losses  
l
l
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode (FRED)  
- soft recovery with low IRM  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
l
min. typ. max.  
l
l
BVCES  
VGE(th)  
IC = 750 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
l
Switch-mode and resonant-mode  
5.5  
power supplies  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
500 µA  
mA  
Advantages  
Space savings (two devices in one  
8
l
package)  
Easy to mount with 1 screw, TO-247  
(isolated mounting screw hole)  
Reduces assembly time and cost  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.7  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
V
l
©1997 IXYS Corporation. All rights reserved.  
92717H (3/97)  
IXGH24N60AU1 IXGH24N60AU1S  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; VCE = 10 V,  
9
13  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
P
Cies  
Coes  
Cres  
1500  
175  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
90  
11  
30  
120 nC  
15 nC  
40 nC  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
td(on)  
tri  
25  
15  
ns  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
Eon  
td(off)  
tfi  
0.6  
150  
110  
1.5  
mJ  
200 ns  
270 ns  
mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Eoff  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
25  
15  
0.8  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
td(off)  
tfi  
250  
400  
2.3  
ns  
ns  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCK  
0.83 K/W  
K/W  
TO-247 SMD Outline  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.6  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs  
VR = 360 V  
10  
TJ = 125°C 150  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 VTJ = 25°C 35  
15  
A
ns  
50 ns  
RthJC  
1 K/W  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Min. Recommended Footprint (Dimensions in inches and (mm))  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
1.14  
1.91  
1.40  
2.13  
.045 .055  
.075 .084  
C
D
0.61  
20.80  
0.80  
21.34  
.024 .031  
.819 .840  
E
e
15.75  
5.45  
16.13  
BSC  
.620 .635  
.215 BSC  
L
4.90  
2.70  
2.10  
0.00  
1.90  
5.10  
2.90  
2.30  
0.10  
2.10  
.193 .201  
.106 .114  
.083 .091  
L1  
L2  
L3  
L4  
.00  
.004  
.075 .083  
ØP  
Q
3.55  
5.59  
3.65  
6.20  
.140 .144  
.220 .244  
R
S
4.32  
6.15  
4.83  
BSC  
.170 .190  
.242 BSC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH24N60AU1 IXGH24N60AU1S  
Fig. 1 Saturation Characteristics  
Fig. 2 Output Characterstics  
150  
40  
35  
30  
25  
20  
15  
10  
5
13V  
11V  
9V  
VGE = 15V  
TJ = 25°C  
TJ = 25°C  
VGE = 15V  
125  
13V  
100  
11V  
75  
50  
25  
7V  
9V  
7V  
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4 Temperature Dependence  
of Output Saturation Voltage  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
10  
9
8
7
6
5
4
3
2
1
0
TJ = 25°C  
VGE = 15V  
IC = 40A  
IC = 20A  
IC = 10A  
I
C = 40A  
I
C = 20A  
IC = 10A  
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
40  
35  
30  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE(th)  
V
CE = 10V  
I
C = 250µA  
BVCES  
IC = 250µA  
TJ = 25°C  
TJ = - 40°C  
TJ = 125°C  
0
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
G20N60p1.JNB  
©1997 IXYS Corporation. All rights reserved.  
IXGH24N60AU1 IXGH24N60AU1S  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
500  
400  
300  
200  
100  
0
5
4
3
2
1
0
500  
400  
300  
200  
100  
0
5
4
3
2
1
0
TJ = 125°C  
TJ = 125°C  
C = 24A  
Eoff  
RG = 10Ω  
I
Eoff  
tfi  
t
fi  
0
20  
40  
60  
80  
100  
120  
0
10  
20  
30  
40  
50  
RG - Ohms  
IC - Amperes  
Fig.9 Gate Charge Characteristic Curve  
Fig.10 Turn-Off Safe Operating Area  
15  
12  
9
100  
10  
IC = 24A  
V
CE = 300V  
TJ = 125°C  
RG = 10Ω  
dV/dt < 3V/ns  
1
6
0.1  
0.01  
3
0
0
25  
50  
75  
100  
0
100  
200  
300  
400  
500  
600  
VCE - Volts  
Qg - nanocoulombs  
G24N60P2.JNB  
Fig.11 Transient Thermal Impedance  
1
D=0.5  
D=0.2  
D = Duty Cycle  
D=0.1  
0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH24N60AU1 IXGH24N60AU1S  
Fig.12 Maximum Forward Voltage Drop  
Fig.13 Peak Forward Voltage VFR and  
Forward Recovery Time tFR  
100  
80  
60  
40  
20  
0
25  
20  
15  
10  
5
1000  
800  
600  
400  
200  
0
TJ = 125°C  
IF = 37A  
TJ = 150°C  
TJ = 100°C  
TJ = 25°C  
VFR  
tfr  
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
100  
200  
300  
400  
500  
600  
Voltage Drop - Volts  
diF /dt - A/µs  
Fig.14 Junction Temperature Dependence  
off IRM and Qr  
Fig.15 Reverse Recovery Chargee  
1.4  
4
3
2
1
0
TJ = 100°C  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VR = 350V  
IF = 30A  
max.  
IRM  
typ.  
IF = 60A  
Qr  
IF = 30A  
IF = 15A  
0
40  
80  
120  
160  
1
10  
100  
1000  
TJ - Degrees C  
diF /dt - A/µs  
Fig.16 Peak Reverse Recovery Current  
Fig.17 Reverse Recovery Time  
40  
30  
20  
10  
0
0.8  
0.6  
0.4  
0.2  
0.0  
IF = 30A  
max.  
TJ = 100°C  
IF = 30A  
TJ = 100°C  
VR = 350V  
VR = 350V  
max.  
typ.  
IF = 60A  
typ.  
IF = 60A  
IF = 30A  
IF = 15A  
IF = 30A  
IF = 15A  
200  
400  
600  
0
200  
400  
600  
diF /dt - A/µs  
diF /dt - A/µs  
©1997 IXYS Corporation. All rights reserved.  
IXGH24N60AU1 IXGH24N60AU1S  
Fig.17 Diode Transient Thermal resistance junction to case  
1.00  
0.10  
0.01  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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