IXGH 24N60A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
9
13
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
135
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
90
11
30
120 nC
15 nC
40 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
25
15
ns
ns
1 = Gate
Inductive load, TJ = 25°C
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 10 Ω
Eon
td(off)
tfi
0.6
150
110
1.5
mJ
200 ns
270 ns
mJ
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Eoff
td(on)
tri
25
15
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 10 Ω
Eon
td(off)
tfi
0.8
250
400
2.3
mJ
ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
0.25
IXGH 24N60A characteristic curves are located on the
IXGH 24N60AU1 data sheet.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
