IXGH 31N60U1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
9
14
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
170
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
80
15
30
100 nC
30 nC
40 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
50
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 10 Ω
160
700 1100 ns
800 1100 ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Eoff
12
mJ
td(on)
tri
50
160
2
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 10 Ω
Eon
td(off)
tfi
mJ
ns
850
1700
19
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
1.6
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
VR = 360 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
10
120
35
15
50
A
ns
ns
TJ =125°C
RthJC
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
