IXFN 58N50
IXFN 61N50
Preliminary Data Sheet
VDSS
ID25
RDS(on)
IXFN 58N50 500V 58A 85 mΩ
IXFN 61N50 500V 61A 75 mΩ
High Current Power MOSFET
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
miniBLOC, SOT-227 B
1
VGS
Continuous
Transient
±20
±30
V
V
2
VGSM
ID25
IDM
TC = 25°C
IXFN 58N50
IXFN 61N50
IXFN 58N50
IXFN 61N50
58
61
232
244
A
A
A
A
4
TC = 25°C (1)
3
1 = Source
3 = Drain
2 = Gate
4 = Source
PD
TC = 25°C
625
W
TJ
-40 ... +150
150
°C
°C
°C
TJM
Tstg
-40 ... +150
VISOL
50/60 Hz, RMS
Mounting torque
t = 1 minute
t = 1s
2500
3000
V~
V~
Features
Md
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• International standard package
• Isolation voltage 3000V (RMS)
• Low RDS (on) HDMOSTM processl
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
(<60 pF)
Terminal connection torque (M4)
Weight
EAR
30
75
g
mJ
- reduced RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Aluminium Nitride Isolation
- increased current ratings
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Applications
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 5 mA
VDS = VGS, ID = 12 mA
VGS = ±20 V DC, VDS = 0
500
V
V
• DC choppers
1.7
4.0
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode
power supplies
±200
nA
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
500
2
µA
mA
Advantages
RDS(on)
VGS = 10 V, ID = 0.5 ID25
58N50
61N50
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
85 mΩ
75 mΩ
• Easy to mount
• Space savings
• High power density
92810G(10/95)
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IXYSCorporation
IXYSSemiconductor
3540 Bassett Street, Santa Clara,CA 95054
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: 408-982-0700
Fax: 408-496-0670
Tel: +49-6206-5030
Fax: +49-6206-503629
