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7P20-TN3-R

型号：

7P20-TN3-R

描述：

200V P沟道MOSFET[ 200V P-CHANNEL MOSFET ]

品牌：

UTC[ Unisonic Technologies ]

页数：

6 页

PDF大小：

209 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
7P20  
Preliminary  
Power MOSFET  
200V P-CHANNEL MOSFET  
„
DESCRIPTION  
The 7P20 uses advanced proprietary, planar stripe, DMOS  
technology to provide excellent RDS(ON), low gate charge and  
operation with low gate voltages. This device is suitable for use  
as a load switch or in PWM applications. They are also well suited  
for high efficiency switching DC/DC converters.  
„
FEATURES  
* RDS(ON) ≦0.69Ω @VGS = -10 V  
* Ultra low gate charge ( typical 19 nC )  
* Low reverse transfer capacitance ( CRSS = typical 25 pF )  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
Lead-free:  
Halogen-free: 7P20G  
7P20L  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-252  
Packing  
Normal  
Lead Free  
Halogen Free  
7P20G-TN3-R  
1
2
3
7P20-TN3-R  
7P20L-TN3-R  
G
D
S
Tape Reel  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 8  
QW-R502-288.a  
7P20  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
-200  
±30  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Continuous Drain Current  
-5.7  
A
Pulsed Drain Current (Note 2)  
IDM  
-22.8  
-5.7  
A
Avalanche Current (Note 2)  
IAR  
A
Single Pulsed Avalanche Energy (Note 3)  
Repetitive Avalanche Energy (Note 2)  
Peak Diode Recovery dv/dt (Note 4)  
EAS  
570  
mJ  
mJ  
V/ns  
EAR  
5.5  
dv/dt  
-5.5  
Ta = 25°C  
TC = 25°C  
2.5  
Power Dissipation  
PD  
W
55  
Junction Temperature  
Storage Temperature  
TJ  
+150  
°C  
TSTG  
-55 ~ +150  
°C  
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by TJ(MAX)  
3. L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω  
I ≦-7.3A, di/dt≦300A/μs, V ≦BV  
DSS  
4.  
SD  
DD  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
MAX  
110  
UNIT  
℃/W  
℃/W  
Junction-to-Ambient  
Junction-to-Case  
θJC  
2.27  
„
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
VGS=0 V, ID=-250 µA  
ID=-250µA,  
Referenced to25°C  
VDS=-200V, VGS=0V  
VDS=0V, VGS=±30V  
-200  
V
ΔBVDSS/ΔTJ  
-0.1  
V/°C  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
Gate Threshold Voltage  
IDSS  
IGSS  
-1  
µA  
±100 nA  
VGS(TH)  
RDS(ON)  
gFS  
VDS=VGS, ID=-250µA  
-3.0  
-5.0  
V
Ω
S
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC PARAMETERS  
Input Capacitance  
VGS=-10V, ID=-2.85A  
0.54 0.69  
3.7  
VDS=-40V, ID=-2.85A (Note 1)  
CISS  
COSS  
CRSS  
590  
140  
25  
770  
180  
35  
pF  
pF  
pF  
V
DS=-25V, VGS=0V, f=1.0MHz  
DS=-160V, VGS=-10V,  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
19  
4.6  
9.5  
15  
25  
V
Gate Source Charge  
Gate Drain Charge  
Turn-ON Delay Time  
Turn-ON Rise Time  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
ID=-7.3A (Note 1, 2)  
40  
230  
70  
VDD=-100V, ID=-7.3A,  
RG=25ꢀ(Note 1, 2)  
110  
30  
tD(OFF)  
tF  
42  
90  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R502-288.a  
www.unisonic.com.tw  
7P20  
Preliminary  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (Cont.)  
PARAMETER SYMBOL  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Diode Forward Voltage  
VSD  
IS  
IS=-5.7A, VGS=0V  
-5.0  
-5.7  
V
A
Maximum Body-Diode Continuous Current  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
-22.8  
A
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
tRR  
V
GS=0V, IS=-7.30 A  
180  
ns  
dIF/dt=100A/s (Note 1)  
QRR  
1.07  
µC  
Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2%  
Note: 2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R502-288.a  
www.unisonic.com.tw  
7P20  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Compliment of D.U.T.  
(N-Channel)  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
VGS  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
IRM  
ISD  
(D.U.T.)  
di/dt  
Body Diode Reverse Current  
VDS  
(D.U.T.)  
VDD  
Body Diode Recovery dv/dt  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-288.a  
www.unisonic.com.tw  
7P20  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
tp  
Time  
VDD  
VDS(t)  
ID(t)  
RG  
VDD  
IAS  
-10V  
D.U.T.  
BVDSS  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
www.unisonic.com.tw  
QW-R502-288.a  
7P20  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R502-288.a  
www.unisonic.com.tw  
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